Defect passivation of a perovskite film by ZnIn2S4nanosheets for efficient and stable perovskite solar cells - Details

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Abstract：

The　defects　of　a　perovskite　film　were　first　passivated　by　two　dimensional　ZnIn2S4　nanosheets,　the　non-radiation　recombination　at　interfaces　was　suppressed　and　the　contact　of　the　perovskite　film　with　water　vapour　in　the　air　was　avoided,　resulting　in　a　high　efficiency　of　20.55%.　This　journal　is　©　The　Royal　Society　of　Chemistry.

Keyword：

Defects Indium compounds Interfaces (materials) Passivation Perovskite Perovskite solar cells Sulfur compounds Zinc compounds

Community：

[ 1 ] [Huang, Jianting]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fujian, Fuzhou; 350116, China
[ 2 ] [Li, Jinting]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fujian, Fuzhou; 350116, China
[ 3 ] [Zheng, Linqi]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fujian, Fuzhou; 350116, China
[ 4 ] [Zhong, Guohui]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fujian, Fuzhou; 350116, China
[ 5 ] [Li, Yafeng]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fujian, Fuzhou; 350116, China
[ 6 ] [Li, Junming]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fujian, Fuzhou; 350116, China
[ 7 ] [Li, Junming]Beijing Key Laboratory for Sensors, Beijing Information Science and Technology University, Beijing; 100192, China
[ 8 ] [Wei, Mingdeng]Fujian Key Laboratory of Electrochemical Energy Storage Materials, Fuzhou University, Fujian, Fuzhou; 350116, China
[ 9 ] [Wei, Mingdeng]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Jiangsu, Changzhou; 213164, China

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Source ：

Chemical Communications

ISSN： 1359-7345

Year： 2022

Issue： 5

Volume： 58

Page： 653-656

4 . 9

JCR@2022

4 . 3 0 0

JCR@2023

ESI HC Threshold：74

JCR Journal Grade：2

CAS Journal Grade：2

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WoS CC Cited Count：

SCOPUS Cited Count： 4

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 3

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