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Abstract:
The construction of heterostructures is a universal method to hinder the radiative recombination of hot electrons and hot holes, which can effectively enhance the photothermal effect of semiconductors. In this work, a one-pot method was employed to prepare a composite named Bi2Se3@ZIF-8 NPs, which incredibly increased the photothermal conversion efficiency of Bi2Se3 NPs. The temperature elevation of Bi2Se3@ZIF-8 NPs was almost double that of the Bi2Se3 NPs; specifically, the temperature of the irradiated Bi2Se3@ZIF-8 NPs was strikingly increased to 130 °C within 6 seconds, and finally stabilized at 165 °C. Furthermore, the photothermal conversion ability was maintained over multiple irradiation cycles, which endows this composite with great potential to be an excellent photothermal agent. © The Royal Society of Chemistry.
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Dalton Transactions
ISSN: 1477-9226
Year: 2021
Issue: 47
Volume: 50
Page: 17499-17505
4 . 5 6 9
JCR@2021
3 . 5 0 0
JCR@2023
ESI HC Threshold:117
JCR Journal Grade:1
CAS Journal Grade:2
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SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 3
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