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author:

Li, Chen (Li, Chen.) [1] | Zheng, Cun (Zheng, Cun.) [2] | Cao, Feng (Cao, Feng.) [3] | Zhang, Yongqi (Zhang, Yongqi.) [4] | Xia, Xinhui (Xia, Xinhui.) [5]

Indexed by:

EI Scopus SCIE

Abstract:

Graphene has been considered a star material since its discovery in 2004 due to its attractive properties such as high electronic conductivity, large surface area, excellent mechanical stability and good heat conducting performance. The graphene technologies and derivatives have developed rapidly in the past decade and form a huge family including graphene oxides, reduced graphene oxides, graphene foam, vertical graphene, graphene sponge and other 3D graphene architectures. The fabrication methods for graphene and derivatives evolve from mechanical exfoliation to chemical exfoliation, and further update to chemical vapor deposition (CVD) and plasma enhanced CVD (PECVD) vapor deposition. Successful commercialization of graphene oxides and reduced graphene oxides have been achieved, and impressively, they are the basic building blocks for other 3D graphene architectures. However, they suffer from relatively low electronic conductivity, restacking and many defects. Meanwhile, high-quality graphene foam and vertical graphene prepared by CVD and PECVD have emerged, but their fabrication process involves high temperature and complex techniques. It is inferred that high-end 3D graphene derivatives with few defects and high electronic conductivity are the future development direction. New facile preparation methods must be developed to assemble graphene units into desired systems or configurations.

Keyword:

Graphene graphene foam graphene oxides vertical graphene

Community:

  • [ 1 ] [Li, Chen]Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313000, Peoples R China
  • [ 2 ] [Zhang, Yongqi]Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313000, Peoples R China
  • [ 3 ] [Xia, Xinhui]Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou 313000, Peoples R China
  • [ 4 ] [Li, Chen]Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Huzhou 313000, Peoples R China
  • [ 5 ] [Zhang, Yongqi]Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Huzhou 313000, Peoples R China
  • [ 6 ] [Xia, Xinhui]Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Huzhou 313000, Peoples R China
  • [ 7 ] [Zheng, Cun]Yueqing Municipal Ecol & Environm Bur, Yueqing 325600, Peoples R China
  • [ 8 ] [Cao, Feng]Huzhou Coll, Dept Engn Technol, Huzhou 313000, Peoples R China
  • [ 9 ] [Xia, Xinhui]Fuzhou Univ, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350116, Peoples R China

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Source :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

Year: 2022

Issue: 8

Volume: 51

Page: 4107-4114

2 . 1

JCR@2022

2 . 2 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 81

SCOPUS Cited Count: 86

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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