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author:

Gao, Xiangqi (Gao, Xiangqi.) [1] | Zou, Yaqian (Zou, Yaqian.) [2] | Zheng, Longxing (Zheng, Longxing.) [3] | Wang, Yan (Wang, Yan.) [4] | Zhu, Zhaojie (Zhu, Zhaojie.) [5] | You, Zhenyu (You, Zhenyu.) [6] | Li, Jianfu (Li, Jianfu.) [7] | Sun, Yijian (Sun, Yijian.) [8] | Lakshminarayana, G. (Lakshminarayana, G..) [9] | Tu, Chaoyang (Tu, Chaoyang.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

The intense 2.9 mu m MIR (mid-infrared) luminescence corresponding to the Dy3+: H-6(13/2 )-> H-6(15/2) transition was achieved for the first time in Dy3+/Yb3+ ions co-doped SrF2 crystals. 2 at% Dy3+: SrF2, 2 at% Dy3+/5 at% Yb3+: SrF2, and 5 at% Yb3+: SrF2 crystals were grown by Bridgman method. The influence of Yb3+ on its spectral properties and energy transfer mechanisms has been studied. In comparison to Dy3+ doped SrF2 crystals, Dy3+/Yb3+ co-doped crystals exhibit not only intense 2.9 mu m emission but also longer high laser energy level lifetimes, favoring 2.9 mu m population inversion and lasing behavior. Furthermore, the ET efficiency from Yb3+ to Dy3+ in Dy3+/Yb3+ co-doped crystals is found to be as high as 95.34%, indicating that the ET from Yb3+ is efficient. The results show that incorporating Yb3+ into Dy3+: SrF2 crystals improves the ability to achieve 2.9 mu m lasing action, which could be used as a potential gain media for laser diode-pumped MIR lasers. (C) 2022 Elsevier B.V. All rights reserved.

Keyword:

Crystals Dy3+ Dy3+/Yb3+ ET MIR laser Yb3+

Community:

  • [ 1 ] [Gao, Xiangqi]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 2 ] [Zou, Yaqian]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 3 ] [Zheng, Longxing]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Wang, Yan]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Zhu, Zhaojie]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 6 ] [You, Zhenyu]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 7 ] [Li, Jianfu]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 8 ] [Tu, Chaoyang]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China
  • [ 9 ] [Gao, Xiangqi]Fujian Normal Univ, Coll Chem & Mat Sci, Fuzhou 350007, Fujian, Peoples R China
  • [ 10 ] [Gao, Xiangqi]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 11 ] [Zou, Yaqian]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 12 ] [Zheng, Longxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 13 ] [Wang, Yan]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 14 ] [Zhu, Zhaojie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 15 ] [You, Zhenyu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 16 ] [Li, Jianfu]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 17 ] [Tu, Chaoyang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Fujian, Peoples R China
  • [ 18 ] [Zou, Yaqian]Univ Chinese Acad Sci, Beijing 100039, Peoples R China
  • [ 19 ] [Zheng, Longxing]Fuzhou Univ, Coll Chem, Fuzhou 350116, Fujian, Peoples R China
  • [ 20 ] [Sun, Yijian]Jiangxi Univ Sci & Technol, Fac Mat Met & Chem, Ganzhou 341000, Jiangxi, Peoples R China
  • [ 21 ] [Lakshminarayana, G.]Kyungpook Natl Univ, Intelligent Construct Automat Ctr, 80 Daehak Ro, Daegu 41566, South Korea

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Source :

JOURNAL OF ALLOYS AND COMPOUNDS

ISSN: 0925-8388

Year: 2022

Volume: 907

6 . 2

JCR@2022

5 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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