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author:

Meng, Tingtao (Meng, Tingtao.) [1] | Zheng, Yueting (Zheng, Yueting.) [2] | Zhao, Denglin (Zhao, Denglin.) [3] | Hu, Hailong (Hu, Hailong.) [4] | Zhu, Yangbin (Zhu, Yangbin.) [5] | Xu, Zhongwei (Xu, Zhongwei.) [6] | Ju, Songman (Ju, Songman.) [7] | Jing, Jipeng (Jing, Jipeng.) [8] | Chen, Xiang (Chen, Xiang.) [9] | Gao, Hongjin (Gao, Hongjin.) [10] | Yang, Kaiyu (Yang, Kaiyu.) [11] | Guo, Tailiang (Guo, Tailiang.) [12] | Li, Fushan (Li, Fushan.) [13] | Fan, Junpeng (Fan, Junpeng.) [14] | Qian, Lei (Qian, Lei.) [15]

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EI

Abstract:

With the ever-growing demand for a greater number of pixels, next-generation displays have challenging requirements for resolution as well as colour gamut. Here, to meet this need, quantum-dot light-emitting diodes (QLEDs) with an ultrahigh pixel resolution of 9,072–25,400 pixels per inch are realized via transfer printing combined with the Langmuir–Blodgett film technology. To reduce the leakage current of the devices, a honeycomb-patterned layer of wide-bandgap quantum dots is embedded between the light-emitting quantum-dot pixels as a non-emitting charge barrier layer. Red and green QLEDs are demonstrated. Notably, the red devices achieve a brightness of up to 262,400 cd m−2 at an applied voltage of 8 V and a peak external quantum efficiency of 14.72%. This work provides a promising way for achieving ultrahigh-resolution QLED devices with high performance. © 2022, The Author(s), under exclusive licence to Springer Nature Limited.

Keyword:

Nanocrystals Organic light emitting diodes (OLED) Pixels Semiconductor quantum dots Thin film transistors

Community:

  • [ 1 ] [Meng, Tingtao]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 2 ] [Meng, Tingtao]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 3 ] [Zheng, Yueting]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 4 ] [Zhao, Denglin]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 5 ] [Hu, Hailong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 6 ] [Hu, Hailong]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 7 ] [Zhu, Yangbin]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 8 ] [Xu, Zhongwei]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 9 ] [Ju, Songman]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 10 ] [Jing, Jipeng]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 11 ] [Chen, Xiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 12 ] [Gao, Hongjin]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 13 ] [Yang, Kaiyu]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 14 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 15 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 16 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 17 ] [Li, Fushan]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
  • [ 18 ] [Fan, Junpeng]Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China
  • [ 19 ] [Qian, Lei]Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China

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Source :

Nature Photonics

ISSN: 1749-4885

Year: 2022

Issue: 4

Volume: 16

Page: 297-303

3 5 . 0

JCR@2022

3 2 . 3 0 0

JCR@2023

ESI HC Threshold:55

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 114

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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