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author:

Xiao, Dongyang (Xiao, Dongyang.) [1] | Chen, Weiliang (Chen, Weiliang.) [2] | Sun, Leimeng (Sun, Leimeng.) [3] | Zhu, Minmin (Zhu, Minmin.) [4] | Ng, Zhi Kai (Ng, Zhi Kai.) [5] | Teo, Edwin Hang Tong (Teo, Edwin Hang Tong.) [6] | Zhang, Jingyu (Zhang, Jingyu.) [7] | Hu, Fangjing (Hu, Fangjing.) [8]

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EI

Abstract:

High and uniform absorption capabilities of terahertz (THz) waves in an ultra-broadband range is desirable for many THz functional devices. Nowadays, it is still challenging to fabricate flexible THz absorbers with a uniformly high absorptance across the entire THz band merely based on traditional bulk materials. Engineered metamaterials absorbers utilize impedance matching to reduce the surface reflection at a single frequency, and can achieve near-unity power absorption within a relatively narrow bandwidth. In this work, a fabrication strategy combining a femtosecond-laser microprocessing process and a two-step-transfer technique is demonstrated for the realization of vertically-aligned carbon nanotube (VACNT) arrays with pyramid-shaped unit cells for THz wave absorptions. To transfer the structured VACNT array from the silicon to the flexible PDMS/Cu/PET substrate, the temperature and pressure dependences of the transfer process are systematically investigated. The fabricated THz absorber demonstrates an average power absorptance over 98.9% from 0.1 to 2.5 THz, and can function well in bended states and after 300 times bending cycles. The proposed fabrication strategy is expected to be used for the patterning of VACNTs and other nanomaterials, and advance the development of novel THz devices for various applications. © 2022 Wiley-VCH GmbH.

Keyword:

Carbon nanotubes Fabrication Femtosecond lasers Terahertz waves Ultra-wideband (UWB)

Community:

  • [ 1 ] [Xiao, Dongyang]MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Hubei, Wuhan; 430074, China
  • [ 2 ] [Xiao, Dongyang]School of Optics and Electronic Information, Huazhong University of Science and Technology, Hubei, Wuhan; 430074, China
  • [ 3 ] [Chen, Weiliang]Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Hubei, Wuhan; 430074, China
  • [ 4 ] [Sun, Leimeng]MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Hubei, Wuhan; 430074, China
  • [ 5 ] [Sun, Leimeng]School of Optics and Electronic Information, Huazhong University of Science and Technology, Hubei, Wuhan; 430074, China
  • [ 6 ] [Zhu, Minmin]College of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350116, China
  • [ 7 ] [Ng, Zhi Kai]School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore; 639798, Singapore
  • [ 8 ] [Teo, Edwin Hang Tong]School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore; 639798, Singapore
  • [ 9 ] [Zhang, Jingyu]Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Hubei, Wuhan; 430074, China
  • [ 10 ] [Hu, Fangjing]MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Hubei, Wuhan; 430074, China

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Source :

Advanced Materials Interfaces

Year: 2022

Issue: 11

Volume: 9

5 . 4

JCR@2022

4 . 3 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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