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author:

Jiang, N. (Jiang, N..) [1] | Wang, Z. (Wang, Z..) [2] | Zheng, Y. (Zheng, Y..) [3] | Guo, Q. (Guo, Q..) [4] | Niu, W. (Niu, W..) [5] | Zhang, R. (Zhang, R..) [6] | Huang, F. (Huang, F..) [7] | Chen, D. (Chen, D..) [8]

Indexed by:

Scopus

Abstract:

High performance blue light-emitting diodes are indispensable for solid-state lighting and full-color displays. Recently, tremendous efforts have been dedicated to boost the performance for blue perovskite light-emitting diodes (PeLEDs). In this work, we construct an ingenious 2D/3D heterostructure perovskite by long-chain organic halide salt post-treatment in blue perovskites for the first time. Organic halide salt post-treatment can form a 2D capping layer on the original 3D perovskite surface, thus to passivate defects and improve exciton radiative recombination rate. As a result, 2D/3D PeLEDs with tunable blue emissions (465, 475, and 486 nm), ultra-low turn-on voltages (3.0, 2.7, and 2.7 V), high brightness (928, 6727, and 9242 cd m−2), and excellent EQEs (2.11%, 6.29%, and 8.57%) are demonstrated. Moreover, due to the high phase homogeneity, the optimized PeLEDs exhibit ultrapure blue emissions (FWHM < 15 nm), in which the PeLED (465 nm) achieve ≈ 98% coverage of the Rec. 2020 standard. © 2022 Elsevier Ltd

Keyword:

2D/3D heterojunction; Blue emission; Passivation; Perovskite light-emitting diodes; Spectrum tunability

Community:

  • [ 1 ] [Jiang, N.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
  • [ 2 ] [Jiang, N.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
  • [ 3 ] [Jiang, N.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou, 350117, China
  • [ 4 ] [Wang, Z.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
  • [ 5 ] [Wang, Z.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou, 350117, China
  • [ 6 ] [Zheng, Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
  • [ 7 ] [Zheng, Y.]College of Chemistry, Fuzhou University, Fuzhou, 350116, China
  • [ 8 ] [Guo, Q.]Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450003, China
  • [ 9 ] [Niu, W.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
  • [ 10 ] [Zhang, R.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
  • [ 11 ] [Huang, F.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
  • [ 12 ] [Chen, D.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
  • [ 13 ] [Chen, D.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou, 350117, China
  • [ 14 ] [Chen, D.]College of Physics and Energy, Fujian Normal University, Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fuzhou, 350117, China

Reprint 's Address:

  • [Wang, Z.]College of Physics and Energy, China

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Source :

Nano Energy

ISSN: 2211-2855

Year: 2022

Volume: 97

1 7 . 6

JCR@2022

1 6 . 8 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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