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author:

Fa, C. (Fa, C..) [1] | Jungui, Z. (Jungui, Z..) [2] | Shijia, L. (Shijia, L..) [3] | Keke, G. (Keke, G..) [4] | Pinqiang, D. (Pinqiang, D..) [5] | Chao, L. (Chao, L..) [6] | Xiaofeng, Z. (Xiaofeng, Z..) [7]

Indexed by:

Scopus

Abstract:

High-entropy alloys (HEAs) hold promise for achieving excellence performance due to unconventional composition and structure. In this paper, the effect of FeCoCrNiAl HEAs as binder instead of Co on the microstructure of WC cemented carbide was investigated. The isothermal oxidation resistance of the WC-HEAs cemented carbides with 6, 10, 15 % was studies at 700, 800, 900 and 1000 °C. The results revealed that the microstrcture of WC-HEAs cemented carbides was dense, and the average grain sizes of WC decreased with the increase of HEAs binder content. The oxide layers containing WO3, NiWO4, and a small amounts of MWO4 (M = Co, Cr) were formed after high-temperature oxidation of WC-HEAs cemented carbides, the ratio of MWO4-to-WO3 in the WC-HEAs oxide layer increases gradually as oxidation temperature increase. The oxide films thickness of WC-10HEAs cemented carbides became thinner than that of WC-10Co at 900 °C. The oxidation kinetic curves also demonstrated that the oxidation resistance of the WC-HEAs cemented carbides was better than that of WC-Co cemented carbide except that the binder content was 6 %, and the oxidation resistance of the WC-HEAs cemented carbide was superior to WC-Co cemented carbide, which was attributed to the formation of protective oxides and MWO4 tungstate. ©2022 The Ceramic Society of Japan. All rights reserved.

Keyword:

Cemented carbide; High-entropy alloy binder; High-temperature oxidation resistance; Microstructure

Community:

  • [ 1 ] [Fa, C.]Xiamen Tungsten Co., LTD., Technology Center, Xiamen, 361009, China
  • [ 2 ] [Fa, C.]College of Materials Science and Engineering, Fujian Provincial Key Laboratory of New Material Preparation and Forming Technology, Fujian University of Technology, Fuzhou, 350118, China
  • [ 3 ] [Fa, C.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 4 ] [Jungui, Z.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 5 ] [Jungui, Z.]Institute of New Materials, Guangdong Academy of Science, National Engineering Laboratory for Modern Materials Surface Engineering Technology, The Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou, 510651, China
  • [ 6 ] [Shijia, L.]College of Materials Science and Engineering, Fujian Provincial Key Laboratory of New Material Preparation and Forming Technology, Fujian University of Technology, Fuzhou, 350118, China
  • [ 7 ] [Keke, G.]College of Materials Science and Engineering, Fujian Provincial Key Laboratory of New Material Preparation and Forming Technology, Fujian University of Technology, Fuzhou, 350118, China
  • [ 8 ] [Keke, G.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 9 ] [Pinqiang, D.]College of Materials Science and Engineering, Fujian Provincial Key Laboratory of New Material Preparation and Forming Technology, Fujian University of Technology, Fuzhou, 350118, China
  • [ 10 ] [Pinqiang, D.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, China
  • [ 11 ] [Chao, L.]Xiamen Tungsten Co., LTD., Technology Center, Xiamen, 361009, China
  • [ 12 ] [Xiaofeng, Z.]Institute of New Materials, Guangdong Academy of Science, National Engineering Laboratory for Modern Materials Surface Engineering Technology, The Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou, 510651, China

Reprint 's Address:

  • [Fa, C.]Xiamen Tungsten Co., China; ; College of Materials Science and Engineering, China; 电子邮件: pqdai@126.com

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Source :

Journal of the Ceramic Society of Japan

ISSN: 1882-0743

Year: 2022

Issue: 7

Volume: 130

Page: 477-486

1 . 1

JCR@2022

1 . 3 0 0

JCR@2023

ESI HC Threshold:91

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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