Vertical　transistors　have　attracted　enormous　attention　in　the　next-generation　electronic　devices　due　to　their　high　working　frequency,　low　operation　voltage　and　large　current　density,　while　a　major　scientific　and　technological　challenge　for　high　performance　vertical　transistor　is　to　find　suitable　source　electrode.　Herein,　an　MXene　material,　Ti3C2Tx,　is　introduced　as　source　electrode　of　organic　vertical　transistors.　The　porous　MXene　films　take　the　advantage　of　both　partially　shielding　effect　of　graphene　and　the　direct　modulation　of　the　Schottky　barrier　at　the　mesh　electrode,　which　significantly　enhances　the　ability　of　gate　modulation　and　reduces　the　subthreshold　swing　to　73　mV/dec.　More　importantly,　the　saturation　of　output　current　which　is　essential　for　all　transistor-based　applications　but　remains　a　great　challenge　for　vertical　transistors,　is　easily　achieved　in　our　device　due　to　the　ultra-thin　thickness　and　native　oxidation　of　MXene,　as　verified　by　finite-element　simulations.　Finally,　our　device　also　possesses　great　potential　for　being　used　as　wide-spectrum　photodetector　with　fast　response　speed　without　complex　material　and　structure　design.　This　work　demonstrates　that　MXene　as　source　electrode　offers　plenty　of　opportunities　for　high　performance　vertical　transistors　and　photoelectric　devices.　©　2022,　The　Author(s).