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author:

Deng, Liying (Deng, Liying.) [1] | Li, Wangyang (Li, Wangyang.) [2] | Sun, Jie (Sun, Jie.) [3] | Wang, Xinghui (Wang, Xinghui.) [4] | Zhang, Qing (Zhang, Qing.) [5] | Lin, Chang (Lin, Chang.) [6] | Pan, Kui (Pan, Kui.) [7] | Yan, Qun (Yan, Qun.) [8] | Cheng, Shuying (Cheng, Shuying.) [9]

Indexed by:

EI

Abstract:

Everyone familiar with two-dimensional (2D) materials is aware of fluorophlogopite mica (FM), which has an atomic-level flat surface that provides an ideal platform for the growth of 2D materials. Since it has been demonstrated that the alkali metal ions (AMI) can aid in the growth of large-sized 2D materials by chemical vapor deposition (CVD) in recent years, it became a major mystery whether FM which contains AMI benefits from them in the preparation of 2D materials by CVD, too. In this article, we dispelled this ambiguity and discovered that temperature is the key for FM as an AMI source to boost the growth of large-sized 2D materials. We carried out variable temperature experiments and found that FM can indeed be incorporated into the growth of large-sized 2D materials as an AMI source at high temperatures and successfully obtained the highly crystalline MoO2 with a larger size compared to those without FM. This finding is of great importance to the understanding of the growth mechanism of FM for 2D materials by CVD and to better exploit its role in the growth of 2D materials. © 2022

Keyword:

Chemical vapor deposition Frequency modulation Ion sources Metal ions Metals Mica Molybdenum oxide

Community:

  • [ 1 ] [Deng, Liying]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 2 ] [Li, Wangyang]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 4 ] [Sun, Jie]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 5 ] [Sun, Jie]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg; 41296, Sweden
  • [ 6 ] [Wang, Xinghui]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 7 ] [Wang, Xinghui]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Zhang, Qing]Department of Chemistry, National University of Singapore, Singapore; 117543, Singapore
  • [ 9 ] [Lin, Chang]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 10 ] [Lin, Chang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 11 ] [Pan, Kui]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 12 ] [Yan, Qun]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350100, China
  • [ 13 ] [Yan, Qun]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 14 ] [Cheng, Shuying]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 15 ] [Cheng, Shuying]College of Physics and Information Engineering, Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China

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Source :

Applied Surface Science

ISSN: 0169-4332

Year: 2023

Volume: 612

6 . 3

JCR@2023

6 . 3 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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