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author:

Zhang, Tingshi (Zhang, Tingshi.) [1] | Zheng, Yanting (Zheng, Yanting.) [2] | Zhao, Xin (Zhao, Xin.) [3] | Lin, Mingxiong (Lin, Mingxiong.) [4] | Yang, Bixia (Yang, Bixia.) [5] | Yan, Jiawei (Yan, Jiawei.) [6] | Zhuang, Zanyong (Zhuang, Zanyong.) [7] (Scholars:庄赞勇) | Yu, Yan (Yu, Yan.) [8] (Scholars:于岩)

Indexed by:

EI Scopus SCIE

Abstract:

Preparation of holey, single-crystal, 2D nanomaterials containing in-plane nanosized pores is very appealing for the environment and energy-related applications. Herein, an in situ topological transformation is showcased of 2D layered double hydroxides (LDHs) allows scalable synthesis of holey, single-crystal 2D transition metal oxides (TMOs) nanomesh of ultrathin thickness. As-synthesized 2D Co/NiO-2 nanomesh delivers superior photocatalytic CO2-syngas conversion efficiency (i.e., V-CO of 32460 mu mol h(-1) g(-1) CO and VH2${V_{{{\rm{H}}_2}}}$ of 17840 mu mol h(-1) g(-1) H-2), with V-CO about 7.08 and 2.53 times that of NiO and 2D Co/NiO-1 nanomesh containing larger pore size, respectively. As revealed in high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), the high performance of Co/NiO-2 nanomesh primarily originates from the edge sites of nanopores, which carry more defect structures (e.g., atomic steps or vacancies) than basal plane for CO2 adsorption, and from its single-crystal structure adept at charge transport. Theoretical calculation shows the topological transformation from 2D hydroxide to holey 2D oxide can be achieved, probably since the trace Co dopant induces a lattice distortion and thus a sharp decrease of the dehydration energy of hydroxide precursor. The findings can advance the design of intriguing holey 2D materials with well-defined geometric and electronic properties.

Keyword:

CO2 photoreduction defect structures holey 2D materials nanosized pores scalable synthesis

Community:

  • [ 1 ] [Zhang, Tingshi]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 2 ] [Zheng, Yanting]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 3 ] [Zhao, Xin]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 4 ] [Lin, Mingxiong]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 5 ] [Yang, Bixia]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 6 ] [Yan, Jiawei]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 7 ] [Zhuang, Zanyong]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 8 ] [Yu, Yan]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China
  • [ 9 ] [Zhang, Tingshi]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China
  • [ 10 ] [Zheng, Yanting]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China
  • [ 11 ] [Zhao, Xin]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China
  • [ 12 ] [Lin, Mingxiong]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China
  • [ 13 ] [Yang, Bixia]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China
  • [ 14 ] [Yan, Jiawei]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China
  • [ 15 ] [Zhuang, Zanyong]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China
  • [ 16 ] [Yu, Yan]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • [Zhuang, Zanyong]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China;;[Yu, Yan]Fuzhou Univ, Coll Mat Sci & Engn, New Campus, Fuzhou, Fujian 350108, Peoples R China;;[Zhuang, Zanyong]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China;;[Yu, Yan]Fuzhou Univ, Key Lab Adv Mat Technol, Fuzhou 350108, Peoples R China;;

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Source :

SMALL

ISSN: 1613-6810

Year: 2023

Issue: 16

Volume: 19

1 3 . 0

JCR@2023

1 3 . 0 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 13

SCOPUS Cited Count: 14

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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