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author:

Liu, Diwen (Liu, Diwen.) [1] | Zhang, Qiqi (Zhang, Qiqi.) [2] | Xu, Chao (Xu, Chao.) [3] (Scholars:徐超) | Sa, Rongjian (Sa, Rongjian.) [4]

Indexed by:

EI Scopus SCIE

Abstract:

Quaternary compound Cu2ZnSnX4 (X = S, Se) is of great interest to many researchers for photovoltaic appli-cations in recent years. In the present study, the first-principles calculations are performed to investigate the influence of cation substitution on the different physical properties of Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe). The difference in stability between two Kesterite and Stannite structures is examined for each com-pound. The results show that the pristine Kesterite structure will be transformed into the Stannite structure when the Zn atoms are replaced by the Mg or Cd atoms. Our results are consistent well with the available literature. The mechanical stability of six compounds are proved and they are ductile materials. The allowed direct elec-tronic transition is found for all compounds at the Gamma point. The band gap variation is analyzed in detail. The band gaps calculated from hybrid functional PBE0 of the studied compounds can agree well with the experimental data. The suitable band gap values of 1.12 and 1.28 eV are obtained for Cu2MgSnSe4 (CMTSe) and Cu2CdSnS4 (CCTS) in single-junction solar cells, whereas the band gaps of Cu2MgSnS4 (CMTS, 1.70 eV) and Cu2CdSnSe4 (CCTSe, 0.77 eV) are too large or small. The band gap energy difference between two tetragonal structures is shown to be negligible for CMTS, CMTSe, CCTS, and CCTSe. Furthermore, the optical properties are compared, and CMTSe and CCTS show strong light absorption capacity from 300 to 800 nm. Our study indicates that both CMTSe and CCTS are the promising materials for solar cell applications.

Keyword:

Cation substitution Cu2ZnSnX4 Electronic structure Optical properties

Community:

  • [ 1 ] [Liu, Diwen]Pingxiang Univ, Sch Mat & Chem Engn, Pingxiang 337055, Peoples R China
  • [ 2 ] [Zhang, Qiqi]Minjiang Univ, Coll Mat & Chem Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Sa, Rongjian]Minjiang Univ, Coll Mat & Chem Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Xu, Chao]Fuzhou Univ, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • [Liu, Diwen]Pingxiang Univ, Sch Mat & Chem Engn, Pingxiang 337055, Peoples R China;;[Sa, Rongjian]Minjiang Univ, Coll Mat & Chem Engn, Fuzhou 350108, Peoples R China;;

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Source :

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN: 1369-8001

Year: 2023

Volume: 154

4 . 2

JCR@2023

4 . 2 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:49

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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