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author:

Bai, Jieyu (Bai, Jieyu.) [1] | Hu, Hailong (Hu, Hailong.) [2] | Yu, Yongshen (Yu, Yongshen.) [3] | Zhu, Yangbin (Zhu, Yangbin.) [4] | Xu, Zhongwei (Xu, Zhongwei.) [5] | Zheng, Wenchen (Zheng, Wenchen.) [6] | Zhao, Haobing (Zhao, Haobing.) [7] | Yang, Kaiyu (Yang, Kaiyu.) [8] | Lin, Lihua (Lin, Lihua.) [9] | Guo, Tailiang (Guo, Tailiang.) [10] | Li, Fushan (Li, Fushan.) [11]

Indexed by:

EI

Abstract:

InP quantum dots (QDs) are considered to be one of the most promising materials for application in light-emitting devices due to the advantages of heavy-metal-free characteristic and widely tunable spectrum covering most of the visible and near-infrared regions. However, the performance of InP quantum dot light-emitting diodes (QLEDs) lags far behind their Cd-containing counterparts, especially as the InP pixelated device is still in its infancy. In this study, multi-component functional QD inks with excellent stability and printability was developed for inkjet printing InP array QLEDs. High-quality QD films can be obtained, both on flat and bank-containing substrates, by precisely controlling the competition between capillary and Marangoni flows in the printed droplets, enabling high device performance. In addition, a periodic ZnO microlens arrays was prepared by nanoimprinting technology to enhance the light extraction efficiency of inkjet-printed InP QLEDs, leading to 127.6% improvement in external quantum efficiency (EQE) compared to the control device. The maximum luminance, EQE and current efficiency of the obtained device are 17,759 cd/m2, 8.1% and 11.1 cd/A, respectively. These results may facilitate the applications of high performance environment-friendly QLEDs by inkjet printing technology. © 2022 Elsevier B.V.

Keyword:

Heavy metals III-V semiconductors II-VI semiconductors Indium phosphide Infrared devices Nanocrystals Organic light emitting diodes (OLED) Quality control Quantum efficiency Semiconducting indium phosphide Semiconductor quantum dots Zinc oxide

Community:

  • [ 1 ] [Bai, Jieyu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Hu, Hailong]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Yu, Yongshen]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Zhu, Yangbin]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Xu, Zhongwei]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Zheng, Wenchen]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Zhao, Haobing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Yang, Kaiyu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 9 ] [Lin, Lihua]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 11 ] [Li, Fushan]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China

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Source :

Organic Electronics

ISSN: 1566-1199

Year: 2023

Volume: 113

2 . 7

JCR@2023

2 . 7 0 0

JCR@2023

ESI HC Threshold:30

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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