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author:

Jin, T. (Jin, T..) [1] | Xiao, X. (Xiao, X..) [2] | Zhang, Z. (Zhang, Z..) [3] | Wu, W. (Wu, W..) [4] | Yuan, Y. (Yuan, Y..) [5] | Mao, X. (Mao, X..) [6]

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Scopus

Abstract:

A three-level (TL) LLC resonant converter of dual-bridge (DB) with hybrid control modulation strategy is proposed for the wide output-voltage range and high input-voltage applications. The topology integrates two neutral-point-clamped arms (NPCs) through an auxiliary transformer, which forms a new controllable double-voltage structure and makes all MOSFETs hold half of the input voltage. Based on the characteristics of the new topology, a hybrid modulation strategy is proposed corresponding to three gain modes, which include conventional pulse frequency modulation (PFM) and fixed frequency phase shift modulation (FF-PSM). Compared to conventional modulation strategies, the proposed hybrid modulation strategy, which improves the output voltage gain range, achieves zero-voltage switching (ZVS) of all the MOSFETs and zero-current switching (ZCS) of rectifier diodes under wider operating voltage and full load range. To minimize the frequency window and improve the efficiency of the converter, the parameter optimization method is designed, which based on the characteristics of the modulation strategy and the relationship among the maximum output voltage gain, resonant current and turned-off current. At last, the experimental results of the 600W prototype are presented to confirm the theoretical and characterization analysis. IEEE

Keyword:

Bridge circuits dual-bridge (DB) Gain LLC Modulation MOSFET three-level Topology Transformers Voltage wide output voltage gain

Community:

  • [ 1 ] [Jin, T.]Department of Electrical Engineering, Fuzhou University, Fuzhou, China
  • [ 2 ] [Xiao, X.]Department of Electrical Engineering, Fuzhou University, Fuzhou, China
  • [ 3 ] [Zhang, Z.]Department of Electrical Engineering, Fuzhou University, Fuzhou, China
  • [ 4 ] [Wu, W.]Department of Electrical Engineering, Fuzhou University, Fuzhou, China
  • [ 5 ] [Yuan, Y.]School of Electrical and Automation Engineering, East China Jiao tong University, China
  • [ 6 ] [Mao, X.]Department of Electrical Engineering, Fuzhou University, Fuzhou, China

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IEEE Transactions on Power Electronics

ISSN: 0885-8993

Year: 2023

Issue: 7

Volume: 38

Page: 1-12

6 . 6

JCR@2023

6 . 6 0 0

JCR@2023

ESI HC Threshold:35

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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