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author:

Lili, S. (Lili, S..) [1] | Gaosheng, F. (Gaosheng, F..) [2] | Longze, L. (Longze, L..) [3] | Hongling, C. (Hongling, C..) [4] | huosheng, W. (huosheng, W..) [5]

Indexed by:

Scopus

Abstract:

The segregation behavior, the stability and strengthening energy, and the electronic structure of Ce at the TiAl3/α-Al interface was studied by first-principles method to understand the mechanism of the action of Ce on the second phase TiAl3 in Al-Ti-B-Ce refiner. The results show that Ce can spontaneously segregate at the nucleation interface of TiAl3 and Al to improve the stability of TiAl3/α-Al interface, and the stability of Ce central site of TiAl3(001) Al/Al (001) interface(0A0H) is the strongest. As for 0A0H interface, Ce has little effect on the electronic structure of Al (001) side of TiAl3/α-Al interface which limits its direct refinement effect on α-Al, while there is a strong bonding force to Al atoms on the TiAl3(001) side to reduce the surface energy of TiAl3, change the selective growth orientation of TiAl3, and provide more nucleation substrate to promote α-Al nucleation on the TiAl3 surface. © 2023, ASM International.

Keyword:

Al-Ti-B-Ce refiner first-principles heterogeneous nucleation segregation of Ce TiAl3/α-Al interface

Community:

  • [ 1 ] [Lili, S.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Lili, S.]Ningde Vocational and Technical College, Fu’an, 355000, China
  • [ 3 ] [Gaosheng, F.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Gaosheng, F.]Minjiang University, Fuzhou, 350108, China
  • [ 5 ] [Longze, L.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Hongling, C.]School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 7 ] [huosheng, W.]School of Materials Science and Engineering, Fujian University of Technology, Fuzhou, 350118, China

Reprint 's Address:

  • [Lili, S.]School of Materials Science and Engineering, China

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Source :

Journal of Materials Engineering and Performance

ISSN: 1059-9495

Year: 2023

Issue: 19

Volume: 32

Page: 8585-8592

2 . 2

JCR@2023

2 . 2 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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