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author:

Zhang, Qing (Zhang, Qing.) [1] | Li, Enlong (Li, Enlong.) [2] | Wang, Yongshuai (Wang, Yongshuai.) [3] | Gao, Changsong (Gao, Changsong.) [4] | Wang, Congyong (Wang, Congyong.) [5] | Li, Lin (Li, Lin.) [6] | Geng, Dechao (Geng, Dechao.) [7] | Chen, Huipeng (Chen, Huipeng.) [8] | Chen, Wei (Chen, Wei.) [9] | Hu, Wenping (Hu, Wenping.) [10]

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EI

Abstract:

Organic field-effect transistors with parallel transmission and learning functions are of interest in the development of brain-inspired neuromorphic computing. However, the poor performance and high power consumption are the two main issues limiting their practical applications. Herein, an ultralow-power vertical transistor is demonstrated based on transition-metal carbides/nitrides (MXene) and organic single crystal. The transistor exhibits a high JON of 16.6 mA cm−2 and a high JON/JOFF ratio of 9.12 × 105 under an ultralow working voltage of −1 mV. Furthermore, it can successfully simulate the functions of biological synapse under electrical modulation along with consuming only 8.7 aJ of power per spike. It also permits multilevel information decoding modes with a significant gap between the readable time of professionals and nonprofessionals, producing a high signal-to-noise ratio up to 114.15 dB. This work encourages the use of vertical transistors and organic single crystal in decoding information and advances the development of low-power neuromorphic systems. © 2022 Wiley-VCH GmbH.

Keyword:

Carbides Electric power utilization Organic field effect transistors Signal to noise ratio Single crystals Transition metals

Community:

  • [ 1 ] [Zhang, Qing]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou; 350207, China
  • [ 2 ] [Zhang, Qing]Department of Chemistry, National University of Singapore, Singapore; 117543, Singapore
  • [ 3 ] [Li, Enlong]National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Li, Enlong]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 5 ] [Wang, Yongshuai]Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing; 100190, China
  • [ 6 ] [Gao, Changsong]National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Gao, Changsong]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 8 ] [Wang, Congyong]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou; 350207, China
  • [ 9 ] [Wang, Congyong]Department of Chemistry, National University of Singapore, Singapore; 117543, Singapore
  • [ 10 ] [Li, Lin]Institute of Molecular Plus, Tianjin University, Tianjin; 300072, China
  • [ 11 ] [Geng, Dechao]Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin; 300072, China
  • [ 12 ] [Chen, Huipeng]National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350108, China
  • [ 13 ] [Chen, Huipeng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 14 ] [Chen, Wei]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou; 350207, China
  • [ 15 ] [Chen, Wei]Department of Chemistry, National University of Singapore, Singapore; 117543, Singapore
  • [ 16 ] [Hu, Wenping]Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou; 350207, China
  • [ 17 ] [Hu, Wenping]Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin; 300072, China

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Source :

Advanced Materials

ISSN: 0935-9648

Year: 2023

Issue: 3

Volume: 35

2 7 . 4

JCR@2023

2 7 . 4 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 27

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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