Nitrogen　doping　is　an　effective　way　to　improve　the　electrical　and　catalytic　properties　of　graphene.　Here,　we　used　a　non-thermal　plasma　technique　with　AC　rotating　arc　to　prepare　nitrogen-doped　graphene.　This　method　does　not　need　catalyst　and　can　produce　nitrogen-doped　graphene　in　the　atmospheric　environment　by　large　scale.　CH4　as　the　carbon　source　and　N-2　as　the　nitrogen　source,　nitrogen-doped　graphene　was　obtained　by　plasma　direct　synthesis.　The　nitrogen　content　in　the　product　was　analyzed　by　X-ray　photoelectron　spectroscopy　and　the　doping　level　was　about　1.19　at.%.　It　was　found　that　H-2　and　CO2　as　carrier　gases　can　change　the　nitrogen　doping　type　and　content.　When　there　was　only　N-2,　pyrrolic　N　and　graphitic　N　were　the　main　forms　in　the　graphene.　The　addition　of　H-2　improved　the　selectivity　of　pyridinic　N　and　pyrrolic　N,　but　decreased　the　nitrogen　doping　content.　CO2　significantly　increased　the　selectivity　of　pyrrolic　N　and　increased　the　nitrogen　doping　content.　In　addition,　the　formation　mechanism　of　nitrogen-doped　graphene　was　briefly　described　in　this　paper.　The　key　in　this　plasma　production　technology　is　to　understand　the　effect　of　carrier　gas　on　nitrogen　doping,　which　is　also　instructive　for　mass　production　in　industry.