Monolayer　group　VI　transition　metal　dichalcogenides　(TMDs)　have　recently　emerged　as　promising　candidates　for　photonic　and　opto-valleytronic　applications.　The　optoelectronic　properties　of　these　atomically-thin　semiconducting　crystals　are　strongly　governed　by　the　tightly　bound　electron-hole　pairs　such　as　excitons　and　trions　(charged　excitons).　The　anomalous　spin　and　valley　configurations　at　the　conduction　band　edges　in　monolayer　WS2　give　rise　to　even　more　fascinating　valley　many-body　complexes.　Here　we　find　that　the　indirect　Q　valley　in　the　first　Brillouin　zone　of　monolayer　WS2　plays　a　critical　role　in　the　formation　of　a　new　excitonic　state,　which　has　not　been　well　studied.　By　employing　a　high-quality　h-BN　encapsulated　WS2　field-effect　transistor,　we　are　able　to　switch　the　electron　concentration　within　K-Q　valleys　at　conduction　band　edges.　Consequently,　a　distinct　emission　feature　could　be　excited　at　the　high　electron　doping　region.　Such　feature　has　a　competing　population　with　the　K　valley　trion,　and　experiences　nonlinear　power-law　response　and　lifetime　dynamics　under　doping.　Our　findings　open　up　a　new　avenue　for　the　study　of　valley　many-body　physics　and　quantum　optics　in　semiconducting　2D　materials,　as　well　as　provide　a　promising　way　of　valley　manipulation　for　next-generation　entangled　photonic　devices.　©　The　Authors.