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author:

Zhou, Zhengxian (Zhou, Zhengxian.) [1] | Zhang, Xianghong (Zhang, Xianghong.) [2] | Ye, Weixi (Ye, Weixi.) [3] | Liu, Di (Liu, Di.) [4] | Lin, Yongjie (Lin, Yongjie.) [5] | Lin, Jiaming (Lin, Jiaming.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] | Chen, Huipeng (Chen, Huipeng.) [8]

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EI

Abstract:

Over the past many years, array circuits, as an important part of electronic systems, show a wide range of application scenarios. However, the pursuit of high-density array circuits will certainly lead to a steep increase in the area of the array driving circuit. In this article, we present a switching array circuit with an artificial neuron, where the neuron acts as a discrete control center for the array circuit, which can effectively reduce the area of the array driving circuit by 75%. In this work, we found that the value of load resistance can affect the switching of individual devices and control the branch threshold voltage range, thus affecting the information processing capability of the branch. This new paradigm of optimized array circuit driving strategy can be used to tune the set and reset threshold voltage of neurons, while processing and outputting information by using this type of configuration. This work provides a potential platform for promoting the development of electronic devices and future high-density array circuits. © 1963-2012 IEEE.

Keyword:

Computer circuits Neurons Threshold voltage Timing circuits

Community:

  • [ 1 ] [Zhou, Zhengxian]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362200, China
  • [ 2 ] [Zhou, Zhengxian]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 3 ] [Zhou, Zhengxian]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 4 ] [Zhang, Xianghong]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [Zhang, Xianghong]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 6 ] [Ye, Weixi]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 7 ] [Ye, Weixi]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 8 ] [Liu, Di]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 9 ] [Liu, Di]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 10 ] [Lin, Yongjie]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 11 ] [Lin, Yongjie]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 12 ] [Lin, Jiaming]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 13 ] [Lin, Jiaming]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 14 ] [Guo, Tailiang]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 15 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 16 ] [Chen, Huipeng]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362200, China
  • [ 17 ] [Chen, Huipeng]Institute of Optoelectronic Display, Fuzhou University, Fuzhou; 350002, China
  • [ 18 ] [Chen, Huipeng]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

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Source :

IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year: 2023

Issue: 6

Volume: 70

Page: 3378-3381

2 . 9

JCR@2023

2 . 9 0 0

JCR@2023

ESI HC Threshold:35

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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