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author:

Cao, Qinyu (Cao, Qinyu.) [1] | Zhao, Ying (Zhao, Ying.) [2] | Ye, Renjie (Ye, Renjie.) [3] | Chen, Xin (Chen, Xin.) [4] | Hu, Xiaolin (Hu, Xiaolin.) [5] | Zhuang, Naifeng (Zhuang, Naifeng.) [6]

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EI

Abstract:

Rhombohedral La:BiFeO3 films were successfully prepared on Si substrates by using Radio frequency magnetron sputtering method. The LaNiO3 as buffer layer is beneficial for improving the quality of the film, reducing surface roughness, and getting rid of the impure phase. The Bi0.9La0.1FeO3/LaNiO3/Si film has the largest piezoelectric coefficient with d33 reaching 4.76 pm/V, which is about 2.5 times larger than that of BiFeO3/LaNiO3/Si. The saturation magnetization and the MCD signal of BiFeO3 films are significantly enhanced by doping La3+. The MCD ellipticity of La:BiFeO3 film at 555 nm increase with the increase of La3+ concentration. Bi0.7La0.3FeO3/LaNiO3/Si film show strong magneto-optical effect with the high MCD ellipticity of 850 deg./cm, which is more than about 1.7 times larger than that of BiFeO3 film. This film is expected to be developed into a new multifunctional material with multi-field coupling of electro-opt-magnetism. © 2023 Elsevier B.V.

Keyword:

Bismuth Bismuth compounds Buffer layers Iron compounds Lanthanum Lanthanum compounds Magnetron sputtering Saturation magnetization Semiconductor doping Silicon Substrates Surface roughness

Community:

  • [ 1 ] [Cao, Qinyu]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 2 ] [Zhao, Ying]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 3 ] [Ye, Renjie]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 4 ] [Chen, Xin]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 5 ] [Chen, Xin]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fujian, Fuzhou; 350108, China
  • [ 6 ] [Hu, Xiaolin]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 7 ] [Hu, Xiaolin]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 8 ] [Zhuang, Naifeng]College of Chemistry, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 9 ] [Zhuang, Naifeng]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fujian, Fuzhou; 350108, China
  • [ 10 ] [Zhuang, Naifeng]Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, Fujian, Fuzhou; 350108, China

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Source :

Journal of Alloys and Compounds

ISSN: 0925-8388

Year: 2023

Volume: 967

5 . 8

JCR@2023

5 . 8 0 0

JCR@2023

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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