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author:

Zou, Peng (Zou, Peng.) [1] | Chen, Guohao (Chen, Guohao.) [2] | Lin, Zhifeng (Lin, Zhifeng.) [3] | Yu, Jun (Yu, Jun.) [4] | Chen, Jianli (Chen, Jianli.) [5]

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EI

Abstract:

Modern circuits often contain standard cells of different threshold voltages (multi-VTs) to achieve a better trade-off between timing and power consumption. Due to the heterogeneous cell structures, the multi-VTs cells impose various implant layer constraints, further complicating the already time-consuming filler cell insertion process. In this paper, we present a fast and near-optimal algorithm to solve the filler insertion problem with complex implant layer rules and minimum filler width constraints. We first propose an inference-driven detecting algorithm to identify each design rule violation accurately. Then, a dynamic-programming-based insertion method is developed to reduce the implant layer violations. Finally, we design a contour-driven violation refinement strategy to further improve manufacturability. Experimental results show that our algorithm can reduce the number of violations significantly compared with state-of-the-art works. Besides, with our identifier in the legalization stage, we can avoid conflicts in advance and solve almost all violations after filler insertion in industrial cases. © 2023 IEEE.

Keyword:

Cells Cytology Dynamic programming Economic and social effects Fillers Inference engines Threshold voltage

Community:

  • [ 1 ] [Zou, Peng]Fudan University, State Key Lab of ASIC & System, Shanghai, China
  • [ 2 ] [Chen, Guohao]Fudan University, State Key Lab of ASIC & System, Shanghai, China
  • [ 3 ] [Lin, Zhifeng]Fuzhou University, Center for Discrete Mathematics and Theoretical Computer Science, Fuzhou, China
  • [ 4 ] [Yu, Jun]Fudan University, State Key Lab of ASIC & System, Shanghai, China
  • [ 5 ] [Chen, Jianli]Fudan University, State Key Lab of ASIC & System, Shanghai, China

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ISSN: 0738-100X

Year: 2023

Volume: 2023-July

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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