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author:

Wang, Kun (Wang, Kun.) [1] | Li, Wenhao (Li, Wenhao.) [2] | Chen, Rong (Chen, Rong.) [3] | Zhang, Yongai (Zhang, Yongai.) [4] | Zhou, Xiongtu (Zhou, Xiongtu.) [5] | Ye, Yun (Ye, Yun.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] | Wu, Chaoxing (Wu, Chaoxing.) [8]

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EI

Abstract:

High-density light-emitting diodes (LEDs) show great potential for next-generation micro-display technology due to their high resolution, long operational life, high brightness and high efficiency. However, conventional fabrication methods for high density LEDs suffer from issues such as growth difficulties, etch damage, and ion implantation damage. In this work, we propose an epitaxial slice damage-free process to fabricate an LED array with high density (2500 pixels per inch). To inhibit the potential electrical and optical crosstalk, the single-contact (SC) operation mode is employed. It is demonstrated that the SC-LEDs show frequency-selective luminescence characteristics. Moreover, crosstalk effect of the LEDs is significantly reduced compared to that operating in conventional DC mode. Finally, the mechanism of crosstalk suppression is revealed by finite element analysis. This work provides a promising approach for realizing high density LED array, offering valuable reference for further development in micro/nano-display technology. © 1980-2012 IEEE.

Keyword:

Crosstalk Finite element method Ion implantation Light emitting diodes

Community:

  • [ 1 ] [Chen, Rong]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 2 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Zhang, Yongai]Rong Chen Is with the Fujian Science and Technology, Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 4 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Zhou, Xiongtu]Rong Chen Is with the Fujian Science and Technology, Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 6 ] [Ye, Yun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 7 ] [Ye, Yun]Rong Chen Is with the Fujian Science and Technology, Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 8 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 9 ] [Guo, Tailiang]Rong Chen Is with the Fujian Science and Technology, Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 10 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 11 ] [Wu, Chaoxing]Rong Chen Is with the Fujian Science and Technology, Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2023

Issue: 11

Volume: 44

Page: 1865-1868

4 . 1

JCR@2023

4 . 1 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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