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author：

Li, J. (Li, J..) [1] | Qiu, J. (Qiu, J..) [2] | Xie, B. (Xie, B..) [3] | Li, W. (Li, W..) [4] | Wang, K. (Wang, K..) [5] | Suk, C.H. (Suk, C.H..) [6] | Wu, C. (Wu, C..) [7] | Yu, Y. (Yu, Y..) [8] | Ye, Y. (Ye, Y..) [9] | Zhou, X. (Zhou, X..) [10] | Zhang, Y. (Zhang, Y..) [11] | Guo, T. (Guo, T..) [12] | Kim, T.W. (Kim, T.W..) [13]

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Scopus

Abstract：

A　high-resolution　quantum-dot　(QD)　light-emitting　device　array　is　considered　to　be　the　key　component　in　a　high　resolution　near-eye　micro-display.　Although　much　research　has　been　committed　to　the　achievement　of　a　high-resolution　QD　pattern,　realizing　a　sub-10　micrometer　or　even　a　sub-micrometer　device　array　is　challenging　because　of　the　requirement　for　precise　vertical　multilayer　alignment　and　the　existence　of　electric-crosstalk　effects.　In　this　work,　we　propose　a　QD-based　light-emitting　metal/oxide/semiconductor　junction　(LE-MOSJ)　with　a　super-simple　structure　of　ITO/Al2O3/QDs/Ag　with　no　injection　or　transfer　layer.　We　measured　the　voltage-frequency-electroluminescence,　spectrum-voltage,　and　spectrum-frequency　characteristics,　used　voltage-dependent　time-resolved　electroluminescence　to　analyze　the　carrier　transport　behavior　and　the　working　mechanism,　and　attribute　the　electron　source　for　the　electroluminescence　to　free　and　surface　defect-captured　electrons.　Finally,　we　successfully　demonstrate　an　ultrahigh-resolution　LE-MOSJ　array　with　∼4200　pixels　per　inch　(PPI).　We　believe　the　proposed　LE-MOSJ　can　provide　an　optional　approach　for　realizing　ultrahigh-resolution　QD-based　display　technology.　©　2023　Elsevier　Ltd

Keyword：

Display High resolution Light-emitting device MOS junction Quantum dot

Community：

  • [ 1 ] [Li J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 2 ] [Qiu J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 3 ] [Xie B.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 4 ] [Li W.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 5 ] [Wang K.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Suk C.H.]Department of Electronic and Computer Engineering, Hanyang University, Seoul, 04763, South Korea
  • [ 7 ] [Wu C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Wu C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 9 ] [Yu Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 10 ] [Ye Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 11 ] [Ye Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 12 ] [Zhou X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 13 ] [Zhou X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 14 ] [Zhang Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 15 ] [Zhang Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 16 ] [Guo T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 17 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
  • [ 18 ] [Kim T.W.]Department of Electronic and Computer Engineering, Hanyang University, Seoul, 04763, South Korea

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Source ：

Nano Energy

ISSN： 2211-2855

Year： 2024

Volume： 120

1 6 . 8 0 0

JCR@2023

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SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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