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author:

Zhang, Yongqi (Zhang, Yongqi.) [1] | Cheng, Hongrui (Cheng, Hongrui.) [2] | Chen, Xin (Chen, Xin.) [3] (Scholars:陈新) | Zheng, Yuanhui (Zheng, Yuanhui.) [4] (Scholars:郑远辉)

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EI Scopus SCIE

Abstract:

Two-dimensional (2D) Sn-based perovskites have emerged as a promising alternative to Pb-based perovskites due to their nontoxic nature. However, Sn2+ ions tend to get oxidized to Sn4+ during the synthesis process, leading to crystalline defects and rapid nonradiative transitions, which limits their applications. In this study, we present a facile molecular doping strategy for (C18H35NH3)(2)SnBr4 perovskite by introducing o-phenylenediamine (oPD) in the precursor solution. The oPD serves a dual role: it not only acts as an electron donor, creating a reducing environment to suppress the oxidation of Sn2+, but also functions as a chelating agent, forming stable compounds with Sn2+. This approach results in 20% oPD doped (C18H35NH3)(2)SnBr4 perovskite, which exhibits a high photoluminescence quantum yield (PLQY) of 95.3% and excellent stability against oxygen. Furthermore, UV-pumped orange and white light-emitting diodes (LEDs) with a CIE coordinate (0.562, 0.431, 0.327, and 0.346) were produced using oPD-doped 2D tin-based perovskite powders, respectively. These findings suggest that the doping strategy has great potential to enhance the stability of 2D Sn-based perovskites and facilitate their application in the field of lighting devices.

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  • [ 1 ] [Zhang, Yongqi]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 2 ] [Cheng, Hongrui]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 3 ] [Chen, Xin]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 4 ] [Zheng, Yuanhui]Fuzhou Univ, Coll Chem, Fuzhou 350116, Peoples R China
  • [ 5 ] [Zhang, Yongqi]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China
  • [ 6 ] [Cheng, Hongrui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China
  • [ 7 ] [Zheng, Yuanhui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350116, Peoples R China

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Source :

JOURNAL OF PHYSICAL CHEMISTRY C

ISSN: 1932-7447

Year: 2023

Issue: 49

Volume: 127

Page: 23827-23834

3 . 3

JCR@2023

3 . 3 0 0

JCR@2023

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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