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author:

Jin, S. (Jin, S..) [1] | Yuan, H. (Yuan, H..) [2] | Pang, T. (Pang, T..) [3] | Zhang, M. (Zhang, M..) [4] | Li, J. (Li, J..) [5] | Zheng, Y. (Zheng, Y..) [6] | Wu, T. (Wu, T..) [7] | Zhang, R. (Zhang, R..) [8] | Wang, Z. (Wang, Z..) [9] | Chen, D. (Chen, D..) [10]

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Scopus

Abstract:

Lead-free double perovskites (DPs) are emerging highly stable emitters with efficient broadband self-trapped exciton (STE) photoluminescence (PL), but their low electroluminescent (EL) efficiency is a critical shortcoming. This work promotes the external quantum efficiency (EQE) and luminance of DP-based white light-emitting diode (wLED) with a normal device structure to 0.76% and 2793 cd m−2 via two modifications: This work prevents the formation of adverse metallic silver, spatially confined STE, and lowers local site symmetry in Cs2Na0.4Ag0.6In0.97Bi0.03Cl6 DP by terbium doping; and this work develops a guest–host strategy to improve film morphology, reduce defect density, and increase carrier mobility. These alterations cause substantial increase in STE radiative recombination and charge injection efficiency of perovskite layer. Finally, pure white EL with ideal color coordinates of (0.328, 0.329) and a record-breaking optoelectronic performance is achieved by introducing additional green carbon dots in LED to fill the deficient green component. © 2023 Wiley-VCH GmbH.

Keyword:

lanthanide dopants lead-free double perovskites light-emitting diodes quantum dots self-trapped excitons

Community:

  • [ 1 ] [Jin S.]College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China
  • [ 2 ] [Yuan H.]College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China
  • [ 3 ] [Pang T.]Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Huzhou, Zhejiang, 313000, China
  • [ 4 ] [Zhang M.]College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China
  • [ 5 ] [Li J.]College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China
  • [ 6 ] [Zheng Y.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fujian, Fuzhou, 350116, China
  • [ 7 ] [Zheng Y.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350116, China
  • [ 8 ] [Wu T.]Key Laboratory of Opto-Electronic Science and Technology for Medicine of Ministry of Education, College of Photonic and Electronic Engineering, Fujian Normal University, Fujian, Fuzhou, 350117, China
  • [ 9 ] [Zhang R.]College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China
  • [ 10 ] [Wang Z.]College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China
  • [ 11 ] [Chen D.]College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian, 350117, China
  • [ 12 ] [Chen D.]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fujian, Fuzhou, 350116, China
  • [ 13 ] [Chen D.]Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fujian, Fuzhou, 350117, China
  • [ 14 ] [Chen D.]Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fujian Normal University, Fujian, Fuzhou, 350117, China

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Source :

Advanced Materials

ISSN: 0935-9648

Year: 2024

Issue: 4

Volume: 36

2 7 . 4 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 38

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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