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author:

Zhu, Minmin (Zhu, Minmin.) [1] | Ren, Fuying (Ren, Fuying.) [2] | Jiang, Haitao (Jiang, Haitao.) [3] | Zhuang, Jiachang (Zhuang, Jiachang.) [4] | Yang, Dan (Yang, Dan.) [5] | Bao, Yiping (Bao, Yiping.) [6] | Zhang, Haizhong (Zhang, Haizhong.) [7]

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EI

Abstract:

Highly stretchable and mechanically foldable electronic devices such as photodetectors (PDs) have garnered significant attention in recent years. Nevertheless, existing devices in this category often compromise their photosensitivity and/or response time in order to achieve the desired stretchability. Here we present a novel free-standing stretchable photodetector constructed using electrospun ferroelectric P(VDF-TrFE) nanofibers (NFs) adorned with boron nitride quantum dots (BNQDs). The incorporation of BNQDs leads to a remarkable 160.0 % increase in the Young's modulus of the composite NFs and enhances their strain capacity to an impressive 120 %. Furthermore, it significantly augments the photoresponsivity by 847.8 %, primarily attributable to the abundant trap states present in the BNQDs. Additionally, we discovered a strong dependency of the giant photocurrent (Iph) on the channel length (l), whereby Iph ≈ 1/l2. Notably, our fabricated devices exhibit exceptional stretchability, allowing for up to 100 % strain while maintaining a rapid rise time of approximately 15.6 ms and an expeditious decay time of 12.6 ms. Our findings underscore the significant potential of ferroelectric polymer NFs decorated with BNQDs in the realm of flexible optoelectronic applications. © 2023

Keyword:

Boron nitride Elastic moduli Ferroelectricity III-V semiconductors Nanocrystals Nanofibers Nitrides Photodetectors Photons Semiconductor quantum dots

Community:

  • [ 1 ] [Zhu, Minmin]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Zhu, Minmin]FZU-Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Fuzhou University, Jinjiang; 362200, China
  • [ 3 ] [Ren, Fuying]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 4 ] [Jiang, Haitao]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 5 ] [Zhuang, Jiachang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 6 ] [Yang, Dan]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 7 ] [Bao, Yiping]Academy of Hi-Tech Research, Hunan Institute of Traffic Engineering, Hengyang; 421099, China
  • [ 8 ] [Zhang, Haizhong]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China
  • [ 9 ] [Zhang, Haizhong]FZU-Jinjiang Joint Institute of Microelectronics, School of Advanced Manufacturing, Fuzhou University, Jinjiang; 362200, China

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Source :

Materials Today Nano

Year: 2024

Volume: 25

8 . 2 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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