Donor　doping　can　increase　the　dielectric　constant　of　a　material　by　several　orders　of　magnitude　due　to　induced　space　charge　causing　interfacial　polarization.　Giant　dielectric　properties　and　interface　polarization　are　also　both　expected　to　greatly　enhance　the　flexoelectric　behavior　of　a　material.　In　this　work,　a　typical　flexoelectric　ceramic　material,　BaTiO3,　was　selected　and　donor　doped　using　elemental　Nb.　Compared　with　the　nominal　BaTiO3　ceramic,　the　dielectric　constant　and　flexoelectric　coefficient　of　the　Nb-doped　BaTiO3　ceramics　were　significantly　improved.　The　transverse　flexoelectric　coefficient　of　0.3　mol.　%　Nb-BaTiO3　was　found　to　increase　to　nearly　40　times　the　nominal　value,　reaching　387　mu　C/m.　The　results　indicate　that　the　giant　dielectric　response,　and　therefore　the　giant　flexoelectric　response,　is　the　result　of　the　combined　effects　of　internal　barrier-layer　capacitance　and　surface　barrier-layer　capacitance.　This　study　not　only　deepens　the　understanding　of　the　semiconductor　macro-dielectric　effect　and　the　flexoelectric　mechanism　caused　by　doping,　but　it　also　provides　a　feasible　strategy　for　the　design　of　giant　dielectric/flexoelectric　response　materials　and　related　devices　with　high　dielectric　constants　and　flexoelectric　coefficients.