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author:

Wang, H. (Wang, H..) [1] | Liu, X. (Liu, X..) [2] | Li, Z. (Li, Z..) [3] | Chen, L. (Chen, L..) [4] | Dai, P. (Dai, P..) [5] | Tang, Q. (Tang, Q..) [6]

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Scopus

Abstract:

Purpose: The purpose of this paper is to study the high temperature oxidation behavior of Ti and C-added FeCoCrNiMn high entropy alloys (HEAs). Design/methodology/approach: Cyclic oxidation method was used to obtain the oxidation kinetic profile and oxidation rate. The microstructures of the surface and cross section of the samples after oxidation were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). Findings: The results show that the microstructure of the alloy mainly consisted of FCC (Face-centered Cubic Structure) main phase and carbides (M7C3, M23C6 and TiC). With the increase of Ti and C content, the microhardness, strength and oxidation resistance of the alloy were effectively improved. After oxidation at a constant temperature of 800 °C for 100 h, the preferential oxidation of chromium in the chromium carbide determined the early formation of dense chromium oxide layers compared to the HEAs substrate, resulting in the optimal oxidation resistance of the TC30 alloy. Originality/value: More precipitated CrC can preferentially oxidize and rapidly form a dense Cr2O3 layer early in the oxidation, which will slow down the further oxidation of the alloy. © 2024, Emerald Publishing Limited.

Keyword:

FeCoCrNiMn HEAs Oxidation behavior Vacuum hot press sintering

Community:

  • [ 1 ] [Wang H.]Fujian University of Technology, Fuzhou, China
  • [ 2 ] [Liu X.]Fujian University of Technology, Fuzhou, China
  • [ 3 ] [Li Z.]Fujian University of Technology, Fuzhou, China
  • [ 4 ] [Chen L.]Fuzhou University, Fuzhou, China
  • [ 5 ] [Dai P.]Fujian University of Technology, Fuzhou, China
  • [ 6 ] [Tang Q.]Putian University, Putian, China

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Source :

Anti-Corrosion Methods and Materials

ISSN: 0003-5599

Year: 2024

Issue: 3

Volume: 71

Page: 307-314

2 . 3 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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