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author:

Zhang, Xu (Zhang, Xu.) [1] | Hu, Hailong (Hu, Hailong.) [2] | Qie, Yuan (Qie, Yuan.) [3] | Lin, Lihua (Lin, Lihua.) [4] | Guo, Tailiang (Guo, Tailiang.) [5] | Li, Fushan (Li, Fushan.) [6]

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EI

Abstract:

With pixel miniaturization, the performance of high-resolution quantum dot light-emitting diodes (QLEDs) usually degrades. Considering the dimension of ultrasmall pixels, herein, a barrier architecture based on localized surface plasmon resonance (LSPR) that promotes the radiative recombination of neighboring quantum dots is rationally designed to improve the device performance. Au nanoparticles (NPs) are embedded in an insulating polymer to form a honeycomb-patterned barrier layer via the nanoimprint process. Each pixel fabricated in the void area (average diameter of 1.5 μm) of the barrier layer is surrounded by a number of LSPR-NPs to enhance the luminescence. The resultant green QLEDs with a resolution of 9027 pixels per inch show a maximum external quantum efficiency of 11.1%, a 42.8% enhancement compared to the control device. Additionally, the lifetime of high-resolution QLEDs is obviously improved by the LSPR effect. © 2024 American Chemical Society

Keyword:

Gold nanoparticles Nanocrystals Organic light emitting diodes (OLED) Pixels Quantum efficiency Semiconductor quantum dots Surface plasmon resonance

Community:

  • [ 1 ] [Zhang, Xu]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 2 ] [Hu, Hailong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 3 ] [Hu, Hailong]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 4 ] [Qie, Yuan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 5 ] [Lin, Lihua]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 6 ] [Lin, Lihua]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 7 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 8 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 9 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou; 350116, China
  • [ 10 ] [Li, Fushan]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2024

Issue: 10

Volume: 16

Page: 13219-13224

8 . 5 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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