Memory-electroluminescence for multiple action-potentials combination in bio-inspired afferent nerves - Details

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The　development　of　optoelectronics　mimicking　the　functions　of　the　biological　nervous　system　is　important　to　artificial　intelligence.　This　work　demonstrates　an　optoelectronic,　artificial,　afferent-nerve　strategy　based　on　memory-electroluminescence　spikes,　which　can　realize　multiple　action-potentials　combination　through　a　single　optical　channel.　The　memory-electroluminescence　spikes　have　diverse　morphologies　due　to　their　history-dependent　characteristics　and　can　be　used　to　encode　distributed　sensor　signals.　As　the　key　to　successful　functioning　of　the　optoelectronic,　artificial　afferent　nerve,　a　driving　mode　for　light-emitting　diodes,　namely,　the　non-carrier　injection　mode,　is　proposed,　allowing　it　to　drive　nanoscale　light-emitting　diodes　to　generate　a　memory-electroluminescence　spikes　that　has　multiple　sub-peaks.　Moreover,　multiplexing　of　the　spikes　can　be　obtained　by　using　optical　signals　with　different　wavelengths,　allowing　for　a　large　signal　bandwidth,　and　the　multiple　action-potentials　transmission　process　in　afferent　nerves　can　be　demonstrated.　Finally,　sensor-position　recognition　with　the　bio-inspired　afferent　nerve　is　developed　and　shown　to　have　a　high　recognition　accuracy　of　98.88%.　This　work　demonstrates　a　strategy　for　mimicking　biological　afferent　nerves　and　offers　insights　into　the　construction　of　artificial　perception　systems.　©　The　Author(s)　2024.

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[ 1 ] [Wang K.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 2 ] [Liao Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 3 ] [Li W.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Li J.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 5 ] [Su H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Chen R.]Fujian Science & amp
[ 7 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 8 ] [Park J.H.]Department of Electronic and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
[ 9 ] [Zhang Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 10 ] [Zhang Y.]Fujian Science & amp
[ 11 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 12 ] [Zhou X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 13 ] [Zhou X.]Fujian Science & amp
[ 14 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 15 ] [Wu C.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 16 ] [Wu C.]Fujian Science & amp
[ 17 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 18 ] [Liu Z.]Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 19 ] [Guo T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 20 ] [Guo T.]Fujian Science & amp
[ 21 ] Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, China
[ 22 ] [Kim T.W.]Department of Electronic and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea

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Nature Communications

ISSN： 2041-1723

Year： 2024

Issue： 1

Volume： 15

1 4 . 7 0 0

JCR@2023

CAS Journal Grade：1

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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