Quantum-dot　light-emitting　diodes　(QLED)　have　become　a　research　trend　in　the　field　of　new　displays　due　to　their　low　cost,　wide　color　gamut,　narrow　bandwidth,　and　characteristics　that　enable　production　through　the　solution-gel　method.　However,　the　electrical　performance　of　QLED　is　consistently　constrained　by　energy　losses　and　imbalanced　charge　carrier　injection.　This　motivates　our　focus　on　exciton　recombination　and　energy　losses　within　the　quantum-dot　layer　to　enhance　the　electrical　efficiency　of　QLED.　In　this　work,　we　introduce　a　method　using　a　CdZnS　quantum　dot　(B-QD)　interlayer　to　modulate　energy　transfer　and　charge　carrier　transport　in　QLED　devices　employing　CdSe　quantum　dot　(G-QD)　as　the　emissive　layer.　By　strategically　incorporating　a　B-QD　layer　between　the　G-QD　and　HTL/ETL,　we　facilitate　energy　transfer　due　to　the　overlap　between　the　excitation　wavelength　of　B-QD　and　the　absorption　wavelength　of　G-QDs.　This　leads　to　enhanced　energy　injection　in　QLED　devices,　resulting　in　a　high　current　efficiency　of　39.54　Cd/A　and　a　peak　brightness　of　522,272　cd/m2　for　efficient　QLED.　The　corresponding　external　quantum　efficiency　(EQE)　is　greatly　improved　from　5.62　%　to　9.4　%.　Our　work　provides　a　straightforward　and　effective　approach　to　modulate　exciton　recombination　and　energy　injection　and　further　can　be　applicable　to　other　photo-electronics　devices.　©　2024　Elsevier　B.V.