As　the　core　component　of　fiber　optic　gyroscopes（FOG），the　performance　of　the　superluminescent　diodes　directly　affects　the　accuracy　of　the　FOG.　The　higher　the　output　power　of　the　superluminescent　diodes，the　better　the　signal-to-noise　ratio　received　by　the　gyroscope.　InP/AlGaInAs　have　the　advantage　of　high　electron　confinement　efficiency.　However，due　to　the　problem　of　Al　oxidation，they　pose　certain　risks　in　terms　of　application　reliability.　In　this　paper，the　InP/InGaAsP　are　used　as　gain　materials，and　the　electron　confinement　efficiency　of　the　quantum　wells　is　improved　by　adopting　the　broad　bandgap　InGaAsP　electron　blocking　layer　in　the　epi-structure.　Experimental　results　show　that　the　electron　blocking　layer　increases　the　maximum　output　power　of　the　laser　diode　from　69　mW　to　92　mW.　Furthermore，by　optimizing　the　material　growth　rate　to　improve　the　quality　of　both　the　active　region　and　the　strained　electron　blocking　layer，it　is　observed　that　the　reliability　of　the　laser　diode　is　significantly　improved　after　aging　for　1　000　h，with　threshold　and　power　variation　falling　within　acceptable　ranges.　Finally，superluminescent　diode　（SLD）chips　were　fabricated，and　the　tested　results　showed　that　the　electron　blocking　layer　increased　the　saturated　output　power　of　SLD　chips　from　19　mW　to　24　mW　at　room　temperature.　The　saturated　operating　current　of　SLD　also　increased，with　a　spectral　width　of　80　nm　and　a　center　wavelength　of　1　500　nm.　Furthermore，after　aging　for　1　000　h，the　threshold　and　power　of　SLD　remained　stable　without　performance　degradation.　©　2024　Editorial　Office　of　Chinese　Optics.　All　rights　reserved.