Quantum　dot　light-emitting　diodes　(QLEDs),　as　an　emerging　display　technology,　have　garnered　widespread　attention　due　to　their　excellent　color　rendering,　high　efficiency,　and　long　lifespan.　However,　the　inherent　differences　in　the　properties　of　charge　transport　layer　materials　inevitably　lead　to　charge　injection　imbalances　and　low　device　performance.　Herein,　we　developed　a　simple　technique　by　using　femtosecond　laser　scanning　over　the　QLED　devices.　The　results　indicate　that　scanning　with　a　femtosecond　laser　improves　the　conductivity　of　the　hole　transport　layer　and　increases　the　external　quantum　efficiency　of　the　QLED　devices.　Our　work　provides　an　effective　route　for　realizing　high　performance　QLED　devices　with　efficient　post-treatment.　©　2024　Author(s).