Integrated　optical　power　splitters　are　basic　but　indispensable　on-chip　devices　in　silicon　photonics.　They　can　be　used　either　for　power　distribution　or　monitoring,　or　as　the　building　blocks　for　more　complex　devices　or　circuits.　Although　different　types　of　optical　power　splitters　with　different　architectures　have　been　proposed　and　demonstrated,　devices　that　could　work　with　arbitrary　power　splitting　ratio　in　a　large　bandwidth　without　polarization　dependence　are　still　rare　to　be　seen.　In　this　paper,　we　propose　and　investigate　an　optical　power　splitter　with　adiabatically　tapered　waveguide　structures　on　a　thick　silicon　nitride　platform,　which　could　meet　the　requirement　mentioned　above.　With　optimized　structural　parameters　obtained　by　three-dimensional　finite-difference　time-domain　(3D-FDTD)　simulation,　the　polarization　dependence　of　different　power　splitting　ratio　gets　almost　eliminated　for　each　specific　working　wavelength.　In　a　broad　wavelength　range　(1　340–1　800　nm),　the　insertion　loss　(IL)　of　the　device　is　below　1　dB,　and　the　variation　of　the　power　splitting　ratio　(PSR)　can　be　controlled　within　∼±5%　if　compared　with　the　targeted　design　value　for　1　550　nm　centered　wavelength.　Simple　structure,　relaxed　critical　dimensions,　and　good　fabrication　tolerance　make　this　device　compatible　with　the　standard　fabrication　process　in　commercial　silicon　photonic　foundries.　©　Tianjin　University　of　Technology　2024.