Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication - Details

author：

Indexed by：

Scopus

Abstract：

In　this　Letter,　a　high-quality　and　high-resistivity　nitrogen　(N)-doped　Ga2O3　current　blocking　layer　(CBL)　is　grown　utilizing　metal-organic　chemical　vapor　deposition　homoepitaxial　technology.　By　using　nitrous　oxide　(N2O)　as　oxygen　source　for　Ga2O3　growth　and　N　source　for　doping　and　controlling　the　growth　temperature,　the　grown　CBL　can　effectively　achieve　high　(∼1019　cm−3)　or　low　(∼1017　cm−3)　N　doping　concentrations,　as　well　as　high　crystal　quality.　Furthermore,　the　electrical　properties　of　the　developed　CBL　are　verified　at　the　device　level,　which　shows　that　the　device　using　the　CBL　can　withstand　bidirectional　voltages　exceeding　3.5　kV　with　very　low　leakage　(≤1　×　10−4　A/cm2).　This　work　can　pave　the　way　for　the　realization　of　high-voltage　and　low-leakage　Ga2O3　vertical　devices,　especially　metal-oxide-semiconductor　field　effect　transistors.　©　2024　Author(s).

Keyword：

Community：

[ 1 ] [Xu X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
[ 2 ] [Chen D.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
[ 3 ] [Lu Y.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
[ 4 ] [Li T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
[ 5 ] [Han X.]Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
[ 6 ] [Chen D.]Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
[ 7 ] [Qi H.]Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
[ 8 ] [Yang D.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
[ 9 ] [Zhu M.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
[ 10 ] [Zhang H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China
[ 11 ] [Lu X.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350116, China

Reprint 's Address：

Email：

Show more details

Related Keywords：

Source ：

Applied Physics Letters

ISSN： 0003-6951

Year： 2024

Issue： 20

Volume： 125

3 . 5 0 0

JCR@2023

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search SCOPUS

Type
Departments

All Years Choose Year From to