Silicon　carbide　(SiC)　is　a　representative　third-generation　semiconductor　known　for　its　superior　properties,　including　a　wide　band　gap,　high　electron　saturation　velocity,　high　thermal　conductivity,　and　high　physical/chemical　stability,　making　it　highly　promising　for　high-power　electronic　devices.　In　SiC　power　devices,　superjunction　architecture　can　reduce　specific　on-resistance　without　compromising　breakdown　voltage,　while　trench-gate　structures　provide　better　control　over　channel　conductivity.　In　this　work,　we　demonstrate　high　aspect　ratio　(＞5:1)　SiC　trenches　for　superjunction　devices　and　corner-rounded　SiC　trenches　for　gate　trench　power　devices　through　plasma　etching.　The　high　aspect　ratio　trenches　were　achieved　by　optimizing　the　gas　ratio　in　the　etching　process,　and　the　corner-rounded　trenches　were　directly　formed　by　introducing　nitrogen　dilution　during　plasma　etching.　These　results　are　significant　for　enhancing　the　performance　of　SiC　trench-based　power　devices.　©　2024　Elsevier　Ltd