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author:

Qiu, Jiawen (Qiu, Jiawen.) [1] | Li, Junlong (Li, Junlong.) [2] | Li, Wenhao (Li, Wenhao.) [3] | Wang, Kun (Wang, Kun.) [4] | Zhang, Shuqian (Zhang, Shuqian.) [5] | Suk, Chan Hee (Suk, Chan Hee.) [6] | Wu, Chaoxing (Wu, Chaoxing.) [7] | Zhou, Xiongtu (Zhou, Xiongtu.) [8] | Zhang, Yongai (Zhang, Yongai.) [9] | Guo, Tailiang (Guo, Tailiang.) [10] | Kim, Tae Whan (Kim, Tae Whan.) [11]

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EI

Abstract:

Neuromorphic computing, inspired by the highly interconnected and energy-efficient way the human brain processes information, has emerged as a promising technology for post-Moore’s law era. This emerging technology can emulate the structures and the functions of the human brain and is expected to overcome the fundamental limitation of the current von Neumann computing architecture. Neuromorphic devices stand out as the key components of future electronic systems, exhibiting potential in shaping the landscape of neuromorphic computing. Especially, nanowire (NW)-based neuromorphic devices, with their advantages of high integration, high-speed computing, and low power consumption, have recently emerged as candidates for neuromorphic computing technology. Here, a critical overview of the current development and relevant research in the field of NW-based neuromorphic devices are provided. Neuromorphic devices based on different NW materials are comprehensively discussed, including Ag NW-based, organic NW-based, metal oxide NW-based, and semiconductor NW-based devices. Finally, as a foresight perspective, the potentials and the challenges of these NW-based neuromorphic devices for use as future brain-like electronics are discussed. © 2024 American Chemical Society.

Keyword:

Carrier concentration Low power electronics Nanowires Neurons Semiconductor devices

Community:

  • [ 1 ] [Qiu, Jiawen]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Li, Junlong]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Li, Wenhao]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Wang, Kun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Zhang, Shuqian]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Suk, Chan Hee]Department of Electronic and Computer Engineering, Hanyang University, Seoul; 04763, Korea, Republic of
  • [ 7 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Wu, Chaoxing]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 9 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Zhou, Xiongtu]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 11 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 12 ] [Zhang, Yongai]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 13 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 14 ] [Guo, Tailiang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 15 ] [Kim, Tae Whan]Department of Electronic and Computer Engineering, Hanyang University, Seoul; 04763, Korea, Republic of

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Source :

ACS Nano

ISSN: 1936-0851

Year: 2024

Issue: 46

Volume: 18

Page: 31632-31659

1 5 . 8 0 0

JCR@2023

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WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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