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author:

Zhang, X. (Zhang, X..) [1] | Liu, D. (Liu, D..) [2] | Wu, J. (Wu, J..) [3] | Cheng, E. (Cheng, E..) [4] | Qin, C. (Qin, C..) [5] | Gao, C. (Gao, C..) [6] | Shan, L. (Shan, L..) [7] | Zou, Y. (Zou, Y..) [8] | Hu, Y. (Hu, Y..) [9] | Guo, T. (Guo, T..) [10] | Chen, H. (Chen, H..) [11]

Indexed by:

Scopus

Abstract:

For convolution neural networks, increasing the performance of hardware computer systems is crucial in the era of big data. Benefiting from the neuromorphic devices, producing the convolutional calculation at the crossbar array circuit has become a promising approach for high-performance hardware computer systems. However, as computation scales, this hardware system faces the challenge of low resource utilization efficiency and low power efficiency. Here, a novel pixel-level strategy, leveraging the dynamic change of electron concentration as the process of convolution calculation, is proposed for high-performance hardware computer systems. Compared with the crossbar array circuit-based strategy, instead of at least four devices, raised the power efficiency to 413% and decreased the training epochs to 38%. This work presents a novel physics-based approach that enables highly efficient convolutional calculation, improves power efficiency, speeds up convergency, and paves the way for building complex convolution neural networks with large-scale convolutional computation capabilities. © 2024 Wiley-VCH GmbH.

Keyword:

carrier dynamics convolution calculation neuromorphic devices organic optoelectronic transistor trapped effect

Community:

  • [ 1 ] [Zhang X.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Zhang X.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 3 ] [Zhang X.]State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
  • [ 4 ] [Liu D.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 5 ] [Liu D.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 6 ] [Wu J.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 7 ] [Wu J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 8 ] [Cheng E.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 9 ] [Cheng E.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 10 ] [Qin C.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 11 ] [Qin C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 12 ] [Gao C.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 13 ] [Gao C.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 14 ] [Shan L.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 15 ] [Shan L.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 16 ] [Zou Y.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 17 ] [Zou Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 18 ] [Hu Y.]Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
  • [ 19 ] [Guo T.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 20 ] [Guo T.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
  • [ 21 ] [Chen H.]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 22 ] [Chen H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China

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Source :

Advanced Functional Materials

ISSN: 1616-301X

Year: 2024

1 8 . 5 0 0

JCR@2023

Cited Count:

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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