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author:

Lan, Shuqiong (Lan, Shuqiong.) [1] | Si, Jinkui (Si, Jinkui.) [2] | Zheng, Zhihan (Zheng, Zhihan.) [3] | Lin, Jierui (Lin, Jierui.) [4] | Yu, Rengjian (Yu, Rengjian.) [5] | Xu, Wangying (Xu, Wangying.) [6] | Zhou, Changjie (Zhou, Changjie.) [7] | Cai, Xiaomei (Cai, Xiaomei.) [8] | Liao, Wenliang (Liao, Wenliang.) [9]

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EI

Abstract:

Artificial synaptic devices are the hardware foundation of modern computing systems which have shown great potential in overcoming the bottleneck of traditional von-Neumann computing architectures. Organic synaptic transistors have garnered considerable attention due to their merits, such as low cost, low weight, and mechanical flexibility. Various materials are utilized for the charge-capture layer in organic synaptic transistors. Indium gallium zinc oxide (IGZO) is a typical metal oxide semiconductor with a wide bandgap, high carrier mobility, and stable characteristics. Moreover, IGZO is an n-type semiconductor with a lower highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy level compared to p-type semiconductor, which has great potential as a capture material to fabricate high-performance synaptic devices. However, the application of IGZO as the trapping layer in organic synaptic transistors has received limited attention. Consequently, an organic synaptic transistor based on organic/inorganic heterojunction was developed. The impact of program/erase time on memory performance was investigated, revealing that the memory window and memory ratio increased as the write/erase time was extended. Additionally, typical synaptic behavior were successfully emulated, including excitatory/inhibitory postsynaptic current, paired-pulse facilitation, paired-pulse depression, high-pass filtering characteristics, and the transformation of short-term plasticity to long-term plasticity. Notably, the synaptic transistor based on an inorganic-organic bilayer heterojunction achieved a high recognition accuracy of 89.2% using the Modified National Institute of Standards and Technology dataset for handwritten digit training. This study provides a facile route for fabricating high-performance synaptic transistors, paving the way for the development of advanced brain-like computers. © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.

Keyword:

Band structure Carrier mobility Electron correlations Excited states Heterojunctions Molecular orbitals MOSFET devices Semiconducting indium gallium arsenide Semiconducting indium phosphide Semiconducting zinc compounds Semiconductor storage

Community:

  • [ 1 ] [Lan, Shuqiong]Department of Physics, Jimei University, Xiamen; 361021, China
  • [ 2 ] [Si, Jinkui]Department of Physics, Jimei University, Xiamen; 361021, China
  • [ 3 ] [Zheng, Zhihan]Department of Physics, Jimei University, Xiamen; 361021, China
  • [ 4 ] [Lin, Jierui]Department of Physics, Jimei University, Xiamen; 361021, China
  • [ 5 ] [Yu, Rengjian]Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [Xu, Wangying]Department of Physics, Jimei University, Xiamen; 361021, China
  • [ 7 ] [Zhou, Changjie]Department of Physics, Jimei University, Xiamen; 361021, China
  • [ 8 ] [Cai, Xiaomei]Department of Physics, Jimei University, Xiamen; 361021, China
  • [ 9 ] [Liao, Wenliang]Department of Physics, Jimei University, Xiamen; 361021, China

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Source :

Journal of Physics D: Applied Physics

ISSN: 0022-3727

Year: 2025

Issue: 13

Volume: 58

3 . 1 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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