Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/decade without Ferroelectric Layer - Details

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Abstract：

This　work　demonstrates　a　low　thermal　budget　amorphous　InWO　(α-IWO)　thin　film　transistor　(TFT)　achieving　a　subthreshold　swing　(S.S.)　of　40　mV/decade　without　utilizing　a　ferroelectric　gate　oxide.　The　oxygen　vacancies　in　α-IWO　induce　the　formation　of　an　interfacial　dipole　layer　at　the　surface　between　α-IWO　and　SiO2/HfO2.　The　TFT　with　dipole-rich　interface　exhibits　the　S.S.　value　below　60　mV/decade　over　2　decades　of　drain　current.　X-ray　diffraction　(XRD)　confirmed　the　absence　of　the　ferroelectric　orthorhombic　phase　in　the　HfO2　layer.　Besides,　the　low　thermal　budget　α-IWO　TFT　also　exhibits　a　high　field　effect　mobility　of　97　cm2/V.s　and　a　large　on/off　current　ratio　of　1.8E6,　while　the　process　temperature　is　as　low　as　300　°C.　©　1980-2012　IEEE.

Keyword：

High-k Engineering Î±-InWO Interfacial Dipole Layer Negative Capacitance-Like Oxygen Vacancy Steep Subthreshold Swing Thin Film Transistor

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[ 1 ] [Zhao Z.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, College of Physics and Information Engineering, School of Advanced Manufacturing, Fuzhou University, 350001, China
[ 2 ] [Gan K.-J.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, College of Physics and Information Engineering, School of Advanced Manufacturing, Fuzhou University, 350001, China
[ 3 ] [Pan S.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, College of Physics and Information Engineering, School of Advanced Manufacturing, Fuzhou University, 350001, China
[ 4 ] [Wang S.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, College of Physics and Information Engineering, School of Advanced Manufacturing, Fuzhou University, 350001, China
[ 5 ] [Li T.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, College of Physics and Information Engineering, School of Advanced Manufacturing, Fuzhou University, 350001, China
[ 6 ] [Ruan D.-B.]Fuzhou University, FZU-Jinjiang Joint Institute of Microelectronics, College of Physics and Information Engineering, School of Advanced Manufacturing, Fuzhou University, 350001, China

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Source ：

IEEE Electron Device Letters

ISSN： 0741-3106

Year： 2025

Issue： 3

Volume： 46

Page： 436-439

4 . 1 0 0

JCR@2023

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