The　structural　design　of　n-i-p　in　antimony　selenide　(Sb2Se3)　thin　film　solar　cells　can　effectively　improve　the　low　carrier　collection　efficiency　caused　by　the　lower　doping　concentration　of　Sb2Se3.　However,　the　unideal　carrier　transport　ability　of　the　intrinsic　light-absorbing　layer　remains　a　major　limitation　for　its　power　conversion　efficiency　improvement.　Herein,　it　is　discovered　that　the　carrier　transport　in　Sb2Se3　thin　films　strongly　depends　on　the　film　thickness　of　the　absorber　layer　in　n-i-p　structure.　By　exploring　the　carrier　transport　mechanism　under　different　thicknesses　of　light-absorbing　layers,　a　suitable　absorber　layer　with　thickness　of　550　nm　is　demonstrated　can　effectively　separate,　transport,　and　extract　photogenerated　carriers　in　Sb2Se3　solar　cells.　Finally,　the　vapor　transport　deposition　processed　Sb2Se3　solar　cells　achieve　the　highest　PCE　of　7.62%　with　a　short-circuit　current　density　of　30.71　mAcm(-2).　This　finding　provides　a　constructive　guidance　for　the　future　researches　on　Sb2Se3　thin　film　solar　cells　with　n-i-p　structure.