This　work　demonstrates　a　low　thermal　budget　amorphous　InWO　(α　-IWO)　thin　film　transistor　(TFT)　achieving　a　subthreshold　swing　(S.S.)　of　40　mV/decade　without　utilizing　a　ferroelectric　gate　oxide.　The　oxygen　vacancies　in　α　-IWO　induce　the　formation　of　an　interfacial　dipole　layer　at　the　surface　between　α　-IWO　and　SiO2/HfO2.　The　TFT　with　dipole-rich　interface　exhibits　the　S.S.　value　below　60　mV/decade　over　2　decades　of　drain　current.　X-ray　diffraction　(XRD)　confirmed　the　absence　of　the　ferroelectric　orthorhombic　phase　in　the　HfO2　layer.　Besides,　the　low　thermal　budget　α　-IWO　TFT　also　exhibits　a　high　field　effect　mobility　of　97　cm2/V·s　and　a　large　on/off　current　ratio　of　1.8E6,　while　the　process　temperature　is　as　low　as　300°C.　©　1980-2012　IEEE.