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author:

Cui, Leilei (Cui, Leilei.) [1] | Zhong, Chao (Zhong, Chao.) [2] | Hu, Hailong (Hu, Hailong.) [3] | Guo, Tailiang (Guo, Tailiang.) [4] | Li, Fushan (Li, Fushan.) [5]

Indexed by:

EI

Abstract:

Quantum dot photodiodes (QLEDs) hold promising potential for next-generation display and lighting devices due to their high emission efficiency, high color purity in the visible region, tunability of emission wavelengths, and low manufacturing costs. However, QLEDs confine a large number of photons inside the device that cannot be utilized, leading to low external quantum efficiency. In this paper, a simple and efficient strategy to construct bilayer light extraction structures is developed based on the self-assembled polystyrene (PS) microspheres embedded in polyvinyl butyral (PVB) film with excellent thermoplasticity. The maximum external quantum efficiency (EQE) of blue-QLED, green-QLED and red-QLED increased from 8.18% to 13.51%, 12.96% to 19.61% and 21.7% to 25%, respectively. It is found that bilayer light extraction structure does not change the light intensity angular distribution of Lambertian emission mode. The bilayer optically coupled structure proposed in this work provides an efficient and stable way for the improvement of QLED performance. © 1980-2012 IEEE.

Keyword:

Display devices Ionomers Light emitting diodes Nanocrystallization Nanocrystals Polyvinyl butyral Quantum efficiency Self assembly

Community:

  • [ 1 ] [Cui, Leilei]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350025, China
  • [ 2 ] [Zhong, Chao]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350025, China
  • [ 3 ] [Hu, Hailong]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350025, China
  • [ 4 ] [Hu, Hailong]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 5 ] [Guo, Tailiang]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350025, China
  • [ 6 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 7 ] [Li, Fushan]Fuzhou University, College of Physics and Information Engineering, Fuzhou; 350025, China
  • [ 8 ] [Li, Fushan]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

Reprint 's Address:

  • [li, fushan]fuzhou university, college of physics and information engineering, fuzhou; 350025, china;;[li, fushan]fujian science and technology innovation laboratory for optoelectronic information of china, fuzhou; 350108, china;;

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2025

Issue: 3

Volume: 46

Page: 452-455

4 . 1 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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