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author:

Jia, Lemin (Jia, Lemin.) [1] | Zhu, Siqi (Zhu, Siqi.) [2] | Zhang, Naiji (Zhang, Naiji.) [3] | Lin, Zhuogeng (Lin, Zhuogeng.) [4] | Cai, Wei (Cai, Wei.) [5] | Cheng, Lu (Cheng, Lu.) [6] | Lu, Xiaoqiang (Lu, Xiaoqiang.) [7] | Zheng, Wei (Zheng, Wei.) [8]

Indexed by:

EI

Abstract:

Monitoring the vacuum ultraviolet (VUV) radiation from the Sun by spaceborne photodetectors is an indispensable and crucial approach in solar physics research and atmospheric photochemistry investigations. Diamond-based photodetectors are emerging as ideal candidates to replace traditional silicon-based detectors for high-selectivity and radiation hardness. Here, a vertical Schottky photodiode based on p-type high-quality single-crystal diamond is presented. By modulating the diamond surface band structure and band alignment, an ultra-short response time of only 15 ns, and a photo-to-dark current ratio greater than 105 under the reverse bias are achieved. It is the first time to study the spectral response of the diamond photodiode in the range of 260 nm to as low as 120 nm under vacuum conditions, exhibiting an ideal selective responsivity and excellent imaging capability in the VUV range. This device holds promising prospects for coupling with optomechanical systems to enable a multidimensional detection of solar VUV radiation, including imaging and spectrum. © 2025 Wiley-VCH GmbH.

Keyword:

Photodetectors Photodiodes Schottky barrier diodes Silicon detectors Solar radiation Ultrahigh vacuum

Community:

  • [ 1 ] [Jia, Lemin]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Jia, Lemin]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen; 518107, China
  • [ 3 ] [Zhu, Siqi]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen; 518107, China
  • [ 4 ] [Zhang, Naiji]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen; 518107, China
  • [ 5 ] [Lin, Zhuogeng]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen; 518107, China
  • [ 6 ] [Cai, Wei]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen; 518107, China
  • [ 7 ] [Cheng, Lu]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen; 518107, China
  • [ 8 ] [Lu, Xiaoqiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 9 ] [Zheng, Wei]State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Shenzhen; 518107, China

Reprint 's Address:

  • [jia, lemin]college of physics and information engineering, fuzhou university, fuzhou; 350108, china;;[jia, lemin]state key laboratory of optoelectronic materials and technologies, school of materials, sun yat-sen university, shenzhen; 518107, china;;

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Source :

Advanced Optical Materials

Year: 2025

Issue: 7

Volume: 13

8 . 0 0 0

JCR@2023

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 0

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