Mitigating Surface Energy and Core-Shell Interface Strain of Yb3+-Doped ZnSe-Based Quantum Dots for Pure-Blue Emission QLED Devices - Details

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Abstract：

Large　ZnSe　quantum　dots　(QDs)　with　an　emission　peak　≈450 nm　hold　significant　promise　for　display　technologies.　However,　achieving　efficient　pure-blue　emission　through　the　enlargement　of　ZnSe　nanocrystals　remains　a　significant　challenge.　In　this　study,　a　breakthrough　is　reported　in　growing　large-size　ZnSe　QDs　well　beyond　the　exciton　Bohr　radius　through　Yb3+　doping　strategy.　Yb3+　doping　reduces　the　surface　energy　of　the　ZnSe　(220)　crystal　plane　and　alleviates　interface　strain　in　the　ZnSe/ZnS　structure,　enabling　the　QDs　to　grow　larger　while　maintaining　enhanced　crystal　stability.　The　resulting　Yb:　ZnSe/ZnS　QDs　exhibit　pure-blue　emission　at　453 nm,　with　a　full　width　at　half　maximum　(FWHM)　of　46 nm　and　a　high　photoluminescence　quantum　yield　(PLQY)　of　67.5%.　When　integrated　into　quantum　dot　light-emitting　diodes　(QLEDs),　the　devices　display　electroluminescence　(EL)　at　455 nm,　with　an　external　quantum　efficiency　(EQE)　of　1.35%,　and　a　maximum　luminance　of　1337.08 cd　m−2.　©　2025　Wiley-VCH　GmbH.

Keyword：

exciton Bohr radius pure blue emission surface energy yb3+ doping znse/zns quantum dots

Community：

[ 1 ] [Hu Z.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 2 ] [Hu Z.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 3 ] [Yang S.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 4 ] [Yang S.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 5 ] [Zheng L.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 6 ] [Zheng L.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 7 ] [Qiu H.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 8 ] [Qiu H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 9 ] [Tanwen J.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 10 ] [Tanwen J.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 11 ] [Gu Y.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 12 ] [Gu Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 13 ] [Li Y.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 14 ] [Li Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 15 ] [Cheng H.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 16 ] [Cheng H.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China
[ 17 ] [Liang Y.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 18 ] [Liang Y.]School of Chemical and Biomolecular Engineering, The University of Sydney, 2006, Australia
[ 19 ] [Zheng Y.]College of Chemistry, Fuzhou University, Fujian, Fuzhou, 350108, China
[ 20 ] [Zheng Y.]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, 350116, China

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Mitigating Surface Energy and Core-Shell Interface Strain of Yb3+-Doped ZnSe-Based Quantum Dots for Pure-Blue Emission QLED Devices
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Source ：

Advanced Materials

ISSN： 0935-9648

Year： 2025

Issue： 26

Volume： 37

2 7 . 4 0 0

JCR@2023

CAS Journal Grade：1

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ESI Highly Cited Papers on the List： 0 Unfold All

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