The　emergence　of　heterophase　2D　materials,　distinguished　by　their　unique　structures,　has　led　to　the　discovery　of　a　multitude　of　intriguing　physical　properties　and　a　broad　range　of　potential　applications.　Here,　out-of-plane　ferroelectricity　is　uncovered　in　a　heterophase　structure　of　1T　＇/1H　MoS2,　which　is　synthesized　via　chemical　vapor　deposition　(CVD)　by　tuning　the　formation　energies　for　MoS2　with　varied　phases.　The　atomically　resolved　structures　of　the　obtained　1T　＇/1H　MoS2　bilayers　are　captured　using　scanning　transmission　electron　microscopy　(STEM)　and　are　confirmed　to　be　non-centrosymmetric　using　second-harmonic　generation　(SHG)　characterizations.　The　intrinsic　out-of-plane　polarization　is　visualized　by　piezoresponse　force　microscopy　(PFM),　which　reveals　that　ferroelectric　domains　can　be　manipulated　under　an　applied　electric　field.　Ferroelectric　tunnel　junction　(FTJ)　devices　fabricated　on　these　bilayers　exhibit　reversible　switching　between　a　high　resistance　state　(HRS)　and　a　low　resistance　state　(LRS).　Density　functional　theory　(DFT)　calculations　elucidate　that　the　intrinsic　ferroelectricity　in　1T　＇/1H　bilayers　is　attributed　to　interlayer　sliding　and　lattice　mismatch.　The　findings　not　only　expand　the　scope　of　2D　ferroelectrics　to　include　vertically　stacked　heterophase　bilayers　but　also　open　avenues　for　exploring　the　coupling　effect　between　ferroelectricity　and　other　phenomena　such　as　magnetism,　superconductivity,　and　photocatalysis　in　2D　heterophase　TMDCs.