Bimolecularly Passivated Buried Interface for Highly Efficient Perovskite Solar Cells - Details

author：

Indexed by：

Abstract：

Electron　extraction　property　is　one　of　the　important　issues　that　limited　the　performance　of　perovskite　solar　cells(PSCs).　SnO2　electron　transport　layer　fabricated　with　a　chemical　bath　deposition　method　has　been　successful　used　in　PSCs.　However，it　usually　has　a　large　number　of　oxygen　vacancies　at　its　surface，which　would　act　as　nonradiative　recombination　centers　at　the　SnO2/perovskite　buried　interface.　Herein，a　SnCl4　and(NH4)2CrO4　bimolecularly　passivated　buried　interface　strategy　is　adopted　in　PSCs，and　the　device　shows　a　power　conversion　efficiency　of　23.　71%.　The　hydrolysis　of　SnCl4　forms　a　layer　of　small　SnO2　nanoparticles　on　the　surface　SnO2，resulting　in　a　smooth　surface.　(NH4)2CrO4　acts　as　an　oxidizer　and　forms　a　thin　layer　of　p-type　semiconductor　Cr2O3　on　n-type　SnO2.　Such　p-n　heterojunctions　compensate　the　oxygen　vacancies　on　SnO2　surface，which　decreases　the　nonradiative　recombination　at　the　buried　interface　and　hence　increases　the　electron　extraction　efficiency.　Meanwhile，the　perovskite　film　deposited　on　the　bimolecularly　passivated　SnO2　exhibits　increased　grain　size，leading　to　decreased　concentration　of　defects.　©　2025　Editorial　Office　of　Chinese　Optics.　All　rights　reserved.

Keyword：

Enameling Gallium compounds Hard facing Heterojunctions Layered semiconductors Perovskite Selenium compounds Semiconducting indium phosphide Semiconducting tin compounds Tin dioxide Wide band gap semiconductors

Community：

[ 1 ] [Wen, Chao]School of Advanced Manufacturing, Fuzhou University, Quanzhou; 362251, China
[ 2 ] [Wen, Chao]Institute for Photonics Technology, Fujian Key Laboratory for Advanced Micro-Nano Photonics Technology and Devices, Fujian Provincial Collaborative Innovation Center for Ultra-Precision Optical Engineering and Applications, Quanzhou Normal University, Quanzhou; 362000, China
[ 3 ] [Chen, Qianyu]College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou; 362000, China
[ 4 ] [Lu, Yingjie]College of Chemical Engineering and Material, Quanzhou Normal University, Quanzhou; 362000, China
[ 5 ] [Liu, Jiapeng]Institute for Photonics Technology, Fujian Key Laboratory for Advanced Micro-Nano Photonics Technology and Devices, Fujian Provincial Collaborative Innovation Center for Ultra-Precision Optical Engineering and Applications, Quanzhou Normal University, Quanzhou; 362000, China
[ 6 ] [Liu, Jiapeng]College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou; 350117, China
[ 7 ] [Yao, Guangping]College of Chemical Engineering and Material, Quanzhou Normal University, Quanzhou; 362000, China
[ 8 ] [Wang, Lidan]College of Physics and Information Engineering, Quanzhou Normal University, Quanzhou; 362000, China
[ 9 ] [Su, Zisheng]Institute for Photonics Technology, Fujian Key Laboratory for Advanced Micro-Nano Photonics Technology and Devices, Fujian Provincial Collaborative Innovation Center for Ultra-Precision Optical Engineering and Applications, Quanzhou Normal University, Quanzhou; 362000, China