Microlight-emitting　diodes　(Micro-LEDs)　offer　numerous　unique　advantages　in　terms　of　materials,　devices,　technologies,　and　process　applications.　To　enable　control　of　LEDs　with　low　current　input,　a　heterojunction　integrated　light-emitting　transistor　(H-LET)　device　is　proposed.　By　vertically　integrating　a　heterojunction　bipolar　transistor　(HBT)　with　a　Micro-LED,　a　multifunctional　optoelectronic　device　capable　of　light　emission,　modulation,　and　driving　functions　is　achieved.　The　structure　incorporates　wide-bandgap　aluminum　gallium　nitride　(AlGaN)　material　into　the　emission　region,　forming　a　heterojunction　with　GaN.　This　significantly　enhances　electron　injection　efficiency　and　current　gain.　Under　low　current　drive,　the　H-LET　device　achieves　a　current　gain　of　up　to　650.　This　results　in　superior　current　regulation　and　high-frequency　response　compared　to　homojunction　light-emitting　transistors.　The　H-LET　shows　significant　potential　for　applications　in　smart　lighting,　high-definition　displays,　radio　frequency　systems,　and　high-speed　communication.