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author:

Li, Y. (Li, Y..) [1] | Zhang, Y. (Zhang, Y..) [2] | Zhao, R. (Zhao, R..) [3] | Huang, H. (Huang, H..) [4] | Liu, X. (Liu, X..) [5] | Feng, Y. (Feng, Y..) [6] | Li, J. (Li, J..) [7] | Ji, Y. (Ji, Y..) [9] | Sun, H. (Sun, H..) [10] | Liao, Q. (Liao, Q..) [11] | Fu, H. (Fu, H..) [12]

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Abstract:

Organic semiconductor single crystals (OSSCs) exhibit long-range intermolecular order and low defect density without grain boundaries, therefore leading to superior carrier transport than organic thin-films but often weak emission due to aggregation-caused quenching. Here, ultrathin 2D plate-like OSSCs of an anthracene derivative, 4,4′ – bis ((E) -2- (anthracene-2-yl) vinyl) −1,1′ – biphenyl (BPVAn) are designed and synthesized, which exhibit not only strong emission with a photoluminescence quantum yield (PLQY) of 56% but also balanced and high charge carrier mobility of µh = 5.6 cm2 V−1 s−1 and µe = 1.3 cm2 V−1 s−1 for hole and electron transport, respectively. Organic light-emitting transistors (OLETs) based on BPVAn OSSCs exhibit strong and spatially controllable light emission within both P- and N- conducting channels, with an external quantum efficiency (EQE) of up to 2.12% and a brightness of 1115 cd m−2. In addition, OSSC parallelogram plates serve as whispering gallery mode (WGM) micro-resonators and exhibit excellent laser characteristics, with a low threshold of 4.2 µJ cm−2 and a high quality (Q) factor of ≈1870 at an emission peak of 503 nm. These results indicate that OSSCs with excellent carrier transport, electroluminescence, and laser properties offer significant potential for the further development of electrically injected organic semiconductor lasers and optoelectronic devices. © 2025 Wiley-VCH GmbH.

Keyword:

anthracene derivatives organic lasers organic light-emitting transistors organic semiconductor single crystals

Community:

  • [ 1 ] [Li Y.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 2 ] [Zhang Y.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 3 ] [Zhao R.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 4 ] [Huang H.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 5 ] [Huang H.]Institute of Molecular Engineering Plus, College of Chemistry, Fuzhou University, Fuzhou, 350108, China
  • [ 6 ] [Liu X.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 7 ] [Feng Y.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 8 ] [Li J.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 9 ] [Li Y.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 10 ] [Ji Y.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 11 ] [Sun H.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 12 ] [Liao Q.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China
  • [ 13 ] [Fu H.]Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry, Capital Normal University, Beijing, 100048, China

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Source :

Advanced Optical Materials

ISSN: 2195-1071

Year: 2025

Issue: 17

Volume: 13

8 . 0 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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