Mid-infrared topological cavity with valley edge modes - Details

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Quantum　cascade　lasers　(QCLs)　and　interband　cascade　lasers　(ICLs)　are　well-established　and　reliable　sources　of　mid-infrared　(IR)　radiation.　In　photonic　crystals,　topological　edge　states　(ESs)　emerge　at　the　boundaries　between　spatial　domains　with　different　topological　properties.　These　ESs　exhibit　unidirectional　transmission,　effectively　suppressing　backscattering　and　maintaining　robustness　against　defects　and　disorders.　In　this　work,　the　unique　attributes　of　topological　valley　photonic　crystals　compatible　with　QCLs　and　ICLs　are　investigated.　The　results　demonstrate　the　topological　protection　offered　by　valley-dependent　ES,　which　is　essential　for　one-way　optical　propagation　in　devices　and　resonant　cavities.　Furthermore,　topologically　protected　triangular　cavities　based　on　VPCs　exhibit　high　quality　factors　and　uniform　energy　distribution,　even　in　the　presence　of　structural　defects.　Additionally,　the　different　characteristics　of　transverse　electric　(TE)　and　transverse　magnetic　(TM)　mode　resonant　cavities　enable　the　development　of　application-specific　topological　lasers,　allowing　for　optimal　performance　tailored　to　diverse　operational　requirements.　©　2025　Optica　Publishing　Group.　All　rights,　including　for　text　and　data　mining　(TDM),　Artificial　Intelligence　(AI)　training,　and　similar　technologies,　are　reserved.

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[ 1 ] [Kang C.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 2 ] [Yu J.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 3 ] [Yu J.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Chen C.]School of Advanced Manufacturing, Fuzhou University, Quanzhou, 362251, China
[ 5 ] [Lai Y.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Cheng S.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
[ 7 ] [Cheng S.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, 213164, China
[ 8 ] [Chen Y.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 9 ] [Chen Y.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 10 ] [Li Y.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 11 ] [Li Y.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 12 ] [Zhang J.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 13 ] [Zhang J.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
[ 14 ] [Liu F.]Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
[ 15 ] [Liu F.]Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

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Applied Optics

ISSN： 1559-128X

Year： 2025

Issue： 12

Volume： 64

Page： 3122-3132

1 . 7 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 2

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